Chinese Journal of Lasers, Volume. 50, Issue 23, 2301004(2023)

High Power 490 nm Laser Based on Semiconductor Disk Intracavity Frequency Doubling

Shengjie Yu1, Jian Feng1, Xin Zhang1, Yao Xiao2, Zhicheng Zhang2, Jun Wang2, and Cunzhu Tong1、*
Author Affiliations
  • 1State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, Jilin, China
  • 2Suzhou Everbright Photonics Co., Ltd., Suzhou 215163, Jiangsu, China
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    [9] Chilla J L A, Butterworth S D, Zeitschel A et al. High-power optically pumped semiconductor lasers[J]. Proceedings of SPIE, 5332, 143-150(2004).

    [10] Hou G Y, Shu S L, Feng J et al. High power (>27 W) semiconductor disk laser based on pre-metalized diamond heat-spreader[J]. IEEE Photonics Journal, 11, 1501908(2019).

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    [12] Wang F. High stability 488 nm light generated by intra-cavity frequency doubling in optically pumped semiconductor disc lasers[J]. Infrared and Laser Engineering, 48, 0606004(2019).

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    Shengjie Yu, Jian Feng, Xin Zhang, Yao Xiao, Zhicheng Zhang, Jun Wang, Cunzhu Tong. High Power 490 nm Laser Based on Semiconductor Disk Intracavity Frequency Doubling[J]. Chinese Journal of Lasers, 2023, 50(23): 2301004

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    Paper Information

    Category: laser devices and laser physics

    Received: Mar. 2, 2023

    Accepted: Apr. 11, 2023

    Published Online: Dec. 7, 2023

    The Author Email: Tong Cunzhu (tongcz@ciomp.ac.cn)

    DOI:10.3788/CJL230580

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