High Power 490 nm Laser Based on Semiconductor Disk Intracavity Frequency Doubling

Shengjie Yu; Jian Feng; Xin Zhang; Yao Xiao; Zhicheng Zhang; Jun Wang; Cunzhu Tong

doi:10.3788/CJL230580

Chinese Journal of Lasers, Volume. 50, Issue 23, 2301004(2023)

High Power 490 nm Laser Based on Semiconductor Disk Intracavity Frequency Doubling

Shengjie Yu¹, Jian Feng¹, Xin Zhang¹, Yao Xiao², Zhicheng Zhang², Jun Wang², and Cunzhu Tong^1、*

¹State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, Jilin, China

²Suzhou Everbright Photonics Co., Ltd., Suzhou 215163, Jiangsu, China

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Shengjie Yu, Jian Feng, Xin Zhang, Yao Xiao, Zhicheng Zhang, Jun Wang, Cunzhu Tong. High Power 490 nm Laser Based on Semiconductor Disk Intracavity Frequency Doubling[J]. Chinese Journal of Lasers, 2023, 50(23): 2301004

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Paper Information

Category: laser devices and laser physics

Received: Mar. 2, 2023

Accepted: Apr. 11, 2023

Published Online: Dec. 7, 2023

The Author Email: Tong Cunzhu (tongcz@ciomp.ac.cn)

DOI:10.3788/CJL230580

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology