Chinese Journal of Lasers, Volume. 50, Issue 23, 2301004(2023)
High Power 490 nm Laser Based on Semiconductor Disk Intracavity Frequency Doubling
Fig. 2. Refractive index and optical field distribution of epitaxial structure of the device
Fig. 3. Semiconductor disk package structure. (a) Metallization and bonding structure of diamond; (b) packaged semiconductor disk laser
Fig. 5. Power and spectral characteristics of an optically pumped semiconductor disk laser
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Shengjie Yu, Jian Feng, Xin Zhang, Yao Xiao, Zhicheng Zhang, Jun Wang, Cunzhu Tong. High Power 490 nm Laser Based on Semiconductor Disk Intracavity Frequency Doubling[J]. Chinese Journal of Lasers, 2023, 50(23): 2301004
Category: laser devices and laser physics
Received: Mar. 2, 2023
Accepted: Apr. 11, 2023
Published Online: Dec. 7, 2023
The Author Email: Tong Cunzhu (tongcz@ciomp.ac.cn)