Chinese Journal of Lasers, Volume. 50, Issue 23, 2301004(2023)

High Power 490 nm Laser Based on Semiconductor Disk Intracavity Frequency Doubling

Shengjie Yu1, Jian Feng1, Xin Zhang1, Yao Xiao2, Zhicheng Zhang2, Jun Wang2, and Cunzhu Tong1、*
Author Affiliations
  • 1State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, Jilin, China
  • 2Suzhou Everbright Photonics Co., Ltd., Suzhou 215163, Jiangsu, China
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    Figures & Tables(10)
    Epitaxial structure of semiconductor disk laser
    Refractive index and optical field distribution of epitaxial structure of the device
    Semiconductor disk package structure. (a) Metallization and bonding structure of diamond; (b) packaged semiconductor disk laser
    Direct-cavity semiconductor disk laser
    Power and spectral characteristics of an optically pumped semiconductor disk laser
    Schematic diagram of V-shaped cavity structure
    Relationship between spot size and cavity position
    Frequency doubling power characteristic curve of blue green light
    Spectral characteristic of blue and green light
    • Table 1. Comparison of 490 nm lasers by intracavity frequency doubling of semiconductor disk lasers

      View table

      Table 1. Comparison of 490 nm lasers by intracavity frequency doubling of semiconductor disk lasers

      Wavelength /

      nm

      Pump

      power /W

      Pump-spot size /μmMaximum power of basic-frequency light /WMaximum power of second harmonic generation(SHG)/W

      Conversion

      efficiency /%

      488123.681201.120.111.7
      488954.5800301527.5
      49230.940022.54.815.4
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    Shengjie Yu, Jian Feng, Xin Zhang, Yao Xiao, Zhicheng Zhang, Jun Wang, Cunzhu Tong. High Power 490 nm Laser Based on Semiconductor Disk Intracavity Frequency Doubling[J]. Chinese Journal of Lasers, 2023, 50(23): 2301004

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    Paper Information

    Category: laser devices and laser physics

    Received: Mar. 2, 2023

    Accepted: Apr. 11, 2023

    Published Online: Dec. 7, 2023

    The Author Email: Tong Cunzhu (tongcz@ciomp.ac.cn)

    DOI:10.3788/CJL230580

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