[1] Chen L H, Yang G W, Liu Y X. Development of semiconductor lasers[J]. Chinese Journal of Lasers, 47, 0500001(2020).

[2] Ma X Y, Zhang N L, Zhong L et al. Research progress of high power semiconductor laser pump source[J]. High Power Laser and Particle Beams, 32, 120-129(2020).

[3] Ning Y Q, Chen Y Y, Zhang J et al. Brief review of development and techniques for high power semiconductor lasers[J]. Acta Optica Sinica, 41, 0114001(2021).

[4] Kintzer E S, Walpole J N, Chinn S R et al. High-power, strained-layer amplifiers and lasers with tapered gain regions[J]. IEEE Photonics Technology Letters, 5, 605-608(1993).

[5] Sujecki S, Borruel L, Wykes J et al. Nonlinear properties of tapered laser cavities[J]. IEEE Journal of Selected Topics in Quantum Electronics, 9, 823-834(2003).

[6] Odriozola H, Tijero J M G, Borruel L et al. Beam properties of 980-nm tapered lasers with separate contacts: experiments and simulations[J]. IEEE Journal of Quantum Electronics, 45, 42-50(2009).

[7] Paschke K, Sumpf B, Dittmar F et al. Nearly diffraction limited 980-nm tapered diode lasers with an output power of 7.7 W[J]. IEEE Journal of Selected Topics in Quantum Electronics, 11, 1223-1227(2005).

[8] Sumpf B, Paschke K. Spectrally stabilized high-power high-brightness DBR-tapered lasers in the VIS and NIR range[J]. Proceedings of SPIE, 10518, 1051817(2018).

[9] Pu T F, Zhang J. High-power high beam-quality tapered semiconductor laser BARs[C]. //2015 International Conference on Optoelectronics and Microelectronics (ICOM), July 16-18, 2015, Changchun, China., 355-359(2015).

[10] Ma X L, Qu H W, Zhao S Y et al. Improved power and efficiency for tapered lasers with optimized photonic crystal structures[J]. Proceedings of SPIE, 10457, 104571O(2017).

[11] Li Y, Du W C, Kun Z et al. High-brightness tapered laser diodes with photonic crystal structures[J]. Proceedings of SPIE, 10697, 106974Y(2018).

[12] Li J, Qiu Y T, Cao Y H et al. High brightness tapered diode laser[J]. Chinese Journal of Luminescence, 37, 990-995(2016).

[13] Li J, Liu Y Y, Ma X Y. High-brightness tapered diode lasers emitting at 980 nm with electrically separated ridge waveguide and tapered section[J]. Chinese Journal of Semiconductors, 28, 1302-1306(2007).

[14] Man Y X, Zhong L, Ma X Y et al. 975 nm semiconductor lasers with ultra-low internal optical loss[J]. Acta Optica Sinica, 40, 1914001(2020).

[15] Sumpf B, Hasler K H, Adamiec P et al. High-brightness quantum well tapered lasers[J]. IEEE Journal of Selected Topics in Quantum Electronics, 15, 1009-1020(2009).

[16] Yan H Y, Gao X, Song J et al. Evaluation of beam quality M2 for 976 nm wide stripe high power semiconductor laser[J]. Chinese Journal of Luminescence, 40, 196-203(2019).