Fig. 1. Calculated taper angle, far field divergence, and effective index corresponding to different etching depths

Fig. 2. Experimental results. (a) Photo of P side of device chip with separated contacts; (b) photo after gold wire bonding

Fig. 3. Power-current characteristics of the tapered laser with separated contacts

Fig. 4. Beam quality factor and beam waist distributions of tapered device, when the taper current is 7 A. (a) Beam quality factor; (b) beam waist distributions

Fig. 5. Schematic diagram of measurement system for laser near-field

Fig. 6. Near-field of the lasers

Fig. 7. Beam quality factor and beam waist distributions of tapered device, when the ridge current is 0.4 A. (a) Beam quality factor; (b) beam waist distributions

Fig. 8. Near-field of the devices