Surface Morphologies of InAs/GaSb Type II Superlattice Materials Obtained via Growth Interruption Method

Chenglin Li; Dan Fang; Jian Zhang; Jiaxu Gao; Xuan Fang; Dengkui Wang; Jilong Tang

doi:10.3788/AOS201939.0916001

Acta Optica Sinica, Volume. 39, Issue 9, 0916001(2019)

Surface Morphologies of InAs/GaSb Type II Superlattice Materials Obtained via Growth Interruption Method

Chenglin Li, Dan Fang^*, Jian Zhang, Jiaxu Gao, Xuan Fang, Dengkui Wang, and Jilong Tang

State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun, Jilin 130022, China

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Figures & Tables(6)

Fig. 1. Diagram of switch sequence

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Fig. 2. Diagrams of superlattice materials. (a) Sample A; (b) sample B

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$Diffraction patterns of superlattice materials. (a) Sample A; (b) sample B$

Fig. 3. Diffraction patterns of superlattice materials. (a) Sample A; (b) sample B

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$Double-crystal X-ray diffraction patterns of superlattice samples. (a) Sample A; (b) sample B$

Fig. 4. Double-crystal X-ray diffraction patterns of superlattice samples. (a) Sample A; (b) sample B

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Fig. 5. Surface morphologies of superlattice samples. (a) Sample A; (b) sample B

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Table 1. Calculation parameters of different samples
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Table 1. Calculation parameters of different samples
Sample Full width at half maximum /(°) Cycle thickness /nm Mean strain /%
A 0.132 6.17 0.64
B 0.150 6.19 0.56

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Chenglin Li, Dan Fang, Jian Zhang, Jiaxu Gao, Xuan Fang, Dengkui Wang, Jilong Tang. Surface Morphologies of InAs/GaSb Type II Superlattice Materials Obtained via Growth Interruption Method[J]. Acta Optica Sinica, 2019, 39(9): 0916001

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