Surface Morphologies of InAs/GaSb Type II Superlattice Materials Obtained via Growth Interruption Method

Chenglin Li; Dan Fang; Jian Zhang; Jiaxu Gao; Xuan Fang; Dengkui Wang; Jilong Tang

doi:10.3788/AOS201939.0916001

Acta Optica Sinica, Volume. 39, Issue 9, 0916001(2019)

Surface Morphologies of InAs/GaSb Type II Superlattice Materials Obtained via Growth Interruption Method

Chenglin Li, Dan Fang^*, Jian Zhang, Jiaxu Gao, Xuan Fang, Dengkui Wang, and Jilong Tang

State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun, Jilin 130022, China

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Chenglin Li, Dan Fang, Jian Zhang, Jiaxu Gao, Xuan Fang, Dengkui Wang, Jilong Tang. Surface Morphologies of InAs/GaSb Type II Superlattice Materials Obtained via Growth Interruption Method[J]. Acta Optica Sinica, 2019, 39(9): 0916001

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Paper Information

Category: Materials

Received: Mar. 29, 2019

Accepted: May. 13, 2019

Published Online: Sep. 9, 2019

The Author Email: Fang Dan (fangdan19822011@163.com)

DOI:10.3788/AOS201939.0916001

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology