Fig. 1. (Color online) The structure of PMOS transistor.

Fig. 2. (Color online) Schematic diagram of charge distribution in MOS gate oxide.

Fig. 3. The main process flow of RADFET fabrication.

Fig. 4. (Color online) Process simulation structure.

Fig. 5. (Color online) RADFET chip layout.

Fig. 6. (Color online) Pre-irradiation measurement data. (a) The transfer characteristics curve, (b) the output characteristics curve with different gate to source voltage (V_GS).

Fig. 7. (Color online) Map data. (a) The drain to source breakdown voltage (BV_DS), (b) the threshold voltage (Vtlin_cal), (c) the leakage current (ioff). The map data exhibit very uniform distribution.

Fig. 8. The reader circuit (RC) configuration.

Fig. 9. (Color online) The dependence of threshold voltage variation on irradiation dose.

Fig. 10. (Color online) The characteristics curves of the RADFETs before and after irradiation at 100 krad(Si). (a) The current RC_I change curve, (b) the transfer characteristics curve of RADFET.