1.3  μm InAs/GaAs quantum dot lasers on silicon with GaInP upper cladding layers

Jun Wang; Haiyang Hu; Haiying Yin; Yiming Bai; Jian Li; Xin Wei; Yuanyuan Liu; Yongqing Huang; Xiaomin Ren; Huiyun Liu

doi:10.1364/PRJ.6.000321

Photonics Research, Volume. 6, Issue 4, 321(2018)

1.3 μm InAs/GaAs quantum dot lasers on silicon with GaInP upper cladding layers

Jun Wang^1、*, Haiyang Hu¹, Haiying Yin¹, Yiming Bai², Jian Li³, Xin Wei³, Yuanyuan Liu⁴, Yongqing Huang¹, Xiaomin Ren¹, and Huiyun Liu⁵

Author Affiliations

¹State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China

²State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, North China Electric Power University, Beijing 102206, China

³Laboratory of Nano Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

⁴Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

⁵Department of Electronic & Electrical Engineering, University College London, London WC1E 7JE, UK

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CLP Journals

[1] Yating Wan, Daisuke Inoue, Daehwan Jung, Justin C. Norman, Chen Shang, Arthur C. Gossard, John E. Bowers, "Directly modulated quantum dot lasers on silicon with a milliampere threshold and high temperature stability," Photonics Res. 6, 776 (2018)

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Jun Wang, Haiyang Hu, Haiying Yin, Yiming Bai, Jian Li, Xin Wei, Yuanyuan Liu, Yongqing Huang, Xiaomin Ren, Huiyun Liu, "1.3 μm InAs/GaAs quantum dot lasers on silicon with GaInP upper cladding layers," Photonics Res. 6, 321 (2018)

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Paper Information

Category: Lasers and Laser Optics

Received: Dec. 12, 2017

Accepted: Feb. 4, 2018

Published Online: Aug. 1, 2018

The Author Email: Jun Wang (wangjun12@bupt.edu.cn)

DOI:10.1364/PRJ.6.000321

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology