Fig. 1. Schematic of the test structure of the QD active region on silicon.

Fig. 2. Room-temperature photoluminescence spectra of the samples with Ga0.51In0.49P layer grown at different temperatures.

Fig. 3. (a) Schematic of the QD laser structure on Si with the GaInP upper cladding layer. (b) 1  μm×1  μm AFM image of uncapped InAs QDs grown with the same conditions. (c) Cross-sectional TEM image of GaAs grown on Si by the three-step growth method.

Fig. 4. Doping profile of the main laser structure grown on silicon.

Fig. 5. (a) Schematic of the device structure. (b) Cross-sectional SEM image of the part of a device structure.

Fig. 6. Light–current characteristics of a broad-stripe laser measured under CW condition at room temperature.

Fig. 7. L-I characteristics of the laser under CW conditions at different operation temperatures.