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Photonics Research, Volume. 6, Issue 4, 321(2018)

1.3  μm InAs/GaAs quantum dot lasers on silicon with GaInP upper cladding layers

Jun Wang1、*, Haiyang Hu1, Haiying Yin1, Yiming Bai2, Jian Li3, Xin Wei3, Yuanyuan Liu4, Yongqing Huang1, Xiaomin Ren1, and Huiyun Liu5
Author Affiliations
  • 1State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
  • 2State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, North China Electric Power University, Beijing 102206, China
  • 3Laboratory of Nano Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 4Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 5Department of Electronic & Electrical Engineering, University College London, London WC1E 7JE, UK
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    The article is cited by 18 article(s) from Web of Science.
    The article is cited by 3 article(s) CLP online library. (Some content might be in Chinese.)
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    Jun Wang, Haiyang Hu, Haiying Yin, Yiming Bai, Jian Li, Xin Wei, Yuanyuan Liu, Yongqing Huang, Xiaomin Ren, Huiyun Liu, "1.3  μm InAs/GaAs quantum dot lasers on silicon with GaInP upper cladding layers," Photonics Res. 6, 321 (2018)

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    Paper Information

    Category: Lasers and Laser Optics

    Received: Dec. 12, 2017

    Accepted: Feb. 4, 2018

    Published Online: Aug. 1, 2018

    The Author Email: Jun Wang (wangjun12@bupt.edu.cn)

    DOI:10.1364/PRJ.6.000321

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology