The non-fluorinated halide scintillation crystals are divided into AX, MX, RX3, AMX3, A2MX4, A4MX6, AM2X5, ARX4, A2RX5, A2A′RX6, A3RX6, A2TX6 and so on according to the chemical composition characteristics, where A, M, R and T represent metal elements with the valence of +1, +2, +3 and +4, respectively; X for halogen elements except fluorine, and A′ for +1 valent metal element different from A. The non-fluorinated halide scintillation crystals with light output of more than 40 000 ph/MeV for γ-ray detection, and those of more than 20 000 ph/MeV for both thermal neutron and γ-ray detection are emphatically introduced, and their research status and development trend are briefly reviewed.

Dysprosium-doped lead thiogallate(Dy∶PbGa2S4, Dy∶PGS) crystal is a medium material for mid-infrared lasers with excellent performance and potential application value. To push forward its practical study, high quality large-sized Dy∶PGS single crystal is urgently required. In this study, an output of 230 g polycrystalline Dy∶PGS was successfully synthesized using a self-made two-zone furnace; a high quality Dy∶PGS single crystal with size of 27 mm×100 mm was grown by vertical gradient freezing method for the first time, and the Dy∶PGS crystal devices were achieved by cutting and polishing processes, laying a solid foundation for the further laser application research of this crystal.

Cs4SrI6∶3% Eu scintillation crystal was successfully grown by vertical Bridgman method. The rough crystal size reaches up to 25×70 mm3, it is the largest Cs4SrI6∶Eu single crystal to date. XRD results show that the crystal has a K4-CdCl6 crystal structure and belongs to the R-3C space group.The fluorescence properties of the crystal were studied by the ultraviolet-visible fluorescence spectrum and X-ray excitation emission spectrum. The scintillation performance and decay time of Cs4SrI6∶Eu single crystal under 137Cs 662 keV radiation were studied. The results show that the crystal has a high light output and excellent energy resolution, decay time is about 1.86 μs. By analyzing the concentration of Eu2+ in different parts of the crystal, calculate the segregation coefficient of Eu2+ in Cs4SrI6∶Eu crystal is 1.136. The results show that Cs4SrI6∶Eu crystal has potential application prospects in radiation detection.

The rare earth halide single crystal of RbY2Cl7∶Ce was successfully grown in quartz ampoules by Bridgman method. The crystal of RbY2Cl7∶Ce crystallizes in orthorhombic structure and the cell parameters were determined to be: a=1.274 69 nm, b=0.693 02 nm, c=1.266 55 nm. The melting point is 617 ℃. X-ray induced photoluminescence spectra, emission spectra, the multichannel energy spectrum and decay curve of γ-ray was characterized. The photoluminescence spectra of RbY2Cl7∶Ce show emission band centered at about 389 nm and excitation band centered at about 336 nm. The energy resolution of the resulting γ-ray peak is ~9.8% under γ-ray excitation of 137Cs source, and the scintillation decay time is about 35 ns.

Gd2SiO5∶Eu3+ crystal was prepared from an isostatic-pressed-powder rod by optical floating zone method. The structure, composition and optical spectral properties were investigated then. XRD analysis shows crystal grows along the direction as ［001］. And swing curve/Raman analysis shows its crystallization is better than raw powder and rod by. The crystal is not only free of macroscopic defects but also free of microscopic defects. EDS and XPS results show that there is no impurity in the crystal. Furthermore, both Gd3d5/2 and Eu4d5/2 binding energy peaks can be deconvolved into two centers, which are assigned to 7-coordinate and 9-coordinate ones. The absorption of Eu3+-O2- charge transfer band and Gd3+4f-4f electron transition (6D/I/PJ→8S7/2) could be detected in UV-Vis absorption spectrum at the low temperature, and Eg is found to be 5.9 eV with the help of (Ahν)1/2-hν curve. Under ultraviolet excitation, it gives out orange-red fluorescence. Under 254 nm, 277 nm, 365 nm, or 396 nm excitation, the crystal would emit a light centered at 583 nm, 596 nm, 620 nm, 629 nm (related to Eu3+ 5D0→7F0,1,2,3), and the intensity is strongest under 277 nm excitation. Monitored with 583 nm, 596 nm, 620 nm, or 629 nm, the excitation spectrum is similar to each other. The excitation spectrum is in range of 200-500 nm with a broad band centered at 277 nm (corresponding to Eu3+-O2- charge transfer, Gd3+ 8S7/2→6IJ) and peaks at 313 nm (Gd3+ 8S7/2→6PJ), 396 nm (Eu3+ 7F0→5L6), and 466 nm (Eu3+ 7F0→5D3). It could be concluded that a high quality Gd2SiO5∶Eu3+ crystal could be obtained by optical floating zone method.

The evolution of crystal orientation of GaN films grown on graphene was investigated. Assisted with AlN nucleation layer, GaN was gradually merged with grains which had the same orientation of graphene from smaller polycrystalline grains. Finally, a GaN film with a thickness of about 4.6 μm was formed. EBSD and XRD have confirmed that the overall orientation of GaN becomes consistent, and Raman spectrum also shows the high crystalline quality of the GaN.

5at%Yb∶CaF2 nano powders were synthesized by the co-precipitation method. The powder is pure cubic CaF2 phase and the average particle size was about 45 nm. Meanwhile, the Yb∶CaF2 nano powders are well-distributed and the shape of small particles is close to cubic. 5at%Yb∶CaF2 transparent ceramics were fabricated by vacuum sintering combined with hot isostatic pressing (HIP) post-treatment. The influences of vacuum pre-sintering temperature on the phase, densification, microstructure and optical transmission of the ceramics were studied. The results show that all the ceramics pre-sintered in vacuum at different temperatures are still pure cubic phase. After HIP post-treatment, 5at%Yb∶CaF2 ceramics with the thickness of 3 mm pre-sintered at 650 ℃ under vacuum have the best optical quality and the in-line transmittance reaches 87% at 1 200 nm.

Combined with Jackson interface theory, molecular dynamics simulation (MD) and density functional theory (DFT), the solid-liquid interface morphology during the growth of silicon crystals (100) and (111) planes was studied, including changes in interface free energy, structure change and growth position adsorption energy. According to the calculation of Jackson interface theory, it is found that the Gibbs free energy of (100) interface crystal phase atom and fluid phase atom reaches a minimum value when they account for about 50% of the surface, while (111) interface reaches a minimum value when they account for about 0% or 100% of the surface, which indicates that (100) plane tends to rough surface and (111) plane tends to smooth surface when the thermodynamics is in equilibrium. Molecular dynamics simulations show that as growth progresses, the initial smooth solid-liquid interface at the (100) plane will gradually transform into a rough interface, while the (111) plane will always maintain a smooth interface growth. And during the growth process, the growth rate of the (100) plane is significantly higher than that of the (111) plane, because the (100) plane growth is always rough surface. DFT calculation shows that the adsorption energy of all growth on (100) plane is close, and continuous growth can be achieved, while the adsorption energy of (111) surface is stored in the obvious difference, the growth atoms need to be adsorbed on the steps to carry out layered growth.

As the substrate material for IC fabrication, the uniformity of silicon single crystal and the size and density of micro defects are highly required. In the process of growing silicon single crystal by traditional Czochralski (Cz) method, the crystal diameter is controlled by the growth-rate, so the growth-rate is always in a fluctuating state. The effects of constant growth-rate on crystal uniformity and defect density and size were still rarely studied. In this research, a 300 mm diameter silicon crystal was grown at the rate of 35±0.7 mm/h. The resistivity distribution between wafers and within a wafer, and the distribution of FPD in the wafer were detected, the results show that the resistivity uniformity of the crystals was improved and the density of FPD are reduced at the lower growth-rate fluctuation stage.

According to the actual electrical parameters of the change rate at high and low temperature current amplification factor of power transistor, the simulation software of the TCAD semiconductor device and the transistor principle were analyzed depth. The results show that, for the power transistors with large test current and high current amplification factor, the change rate at high and low temperature current amplification factor of can be effectively improved by decreasing the doping concentration in the emitter region and increasing the doping concentration in the base to a certain extent. At a certain concentration of the surface of the emitter region and the surface concentration of the base, the optimization of the junction depth and the width of the base can meet the requirements of the current amplification index at room temperature. Combined with the simulation results, the key processes were solved through the actual flow sheet. The flow sheet results show that the process method of reducing the doping concentration in the emitter region and increasing the doping concentration in the base can effectively improve the change rate of current amplification factor at high and low temperature, and control the measured values of other parameters to meet the design requirements.

The crystal structure， electron density difference, electronic properties, optical properties and thermodynamic property of AlxGa1-x As system were calculated by the first principle method on the density functional theory as aluminum composition x changes from 0 to 1. The results show that, the lattice constant of AlxGa1-xAs system increases linearly with composition x of aluminum. The band structure shows that, the energy gap width increases with the increase of aluminum composition, and when x≥0.5, the energy gap will change from direct one to indirect one. The coefficient of static dielectric loss ε1(0) decrease with the increase of aluminum, and the band edge of the absorption coefficient has blue shifts with the increase of x. It can be seen from the variation of Debye temperature of the material system with the aluminum composition that when aluminum composition increases, the sound velocity and elastic stiffness constants of the system also increase correspondingly. At high temperature, the nonlinear increase of the specific heat capacity is caused by the nonlinear increase of the original cell number of AlxGa1-xAs per unit mass. By analyzing the photoelectric characteristics and thermodynamic property of AlxGa1-x As system with different aluminum atomic composition, the theoretical foundation is laid for the application of AlxGa1-x As semiconductor materials in optoelectronic devices, integrated circuits solar cells and other aspects as well as the subsequent in-depth research.

In this paper, on the basis of polydiketopyrrolopyrrole-bithiophene (PDPP-2T, P1), three groups of pyridine (Py), thiazole (Tz), and furan (THF) were selected to construct a D-π-A copolymer P2, P3, P4, and the photoelectric properties of the four polymers were calculated by the first-principle of density functional (DFT). The calculation results show that the band curvature becomes larger after the introduction of the π bridge, which is helpful to improve the conductivity of the copolymer, but the band gap increases. The short-wave absorption peaks of the light absorption peak are red-shift, and the long-wave peaks of P2 and P4 are blue shift, while the long-wave peak of P3 does not change much. And the intensity of the long-wave absorption peak is weakened. The influence of three kinds of π bridges on the charge transfer between D and A units was studied by Bader charge analysis. It was found that the charge transfers of P2 and P3 decreases and P4 increases slightly after the introduction of π bridges. It is an gain-electron unit or a loss-electron unit, which shows that the introduction of a π bridge has a certain effect on the charge transport of the D/A copolymer. In short, it is a problem that needs to be considered comprehensively to increase the photoelectric properties of the copolymer by introducing a π bridge.

Several prominent conductive polymers such as PTAA possesses appealing photoelectric properties suitable to be adopted as the hole transporting materials in perovskite solar cells aiming for elevated performance. Unfortunately, hydrophobic surface hampers the formation of dense and high quality perovskite films above. Moreover, the undesirable contact between carrier transporting layer and perovskite film even achieved through some approaches also induce serious carrier recombination around the interface. Meanwhile, rough surface of perovskite film gives rise to the uncomplete coverage of sequent electron transport layer deposition. Consequently, it is still challenging to acheieve conformal deposition on hydrophobic carrier transporting layers to obtain excellent device performance. In this study, anchoring engineering utilizing PbI2 is demonstrated to be a facile, green and effective approach to solve the problem of wettability of hydrophobic carrier transport layer. By this method, the quality of perovskite film and the performance of the device are greatly improved, and devices which the efficiency is as high as 19.53% was obtained. At the same time, this method is also generally applicable to other hydrophobic carrier transport layers to prepare excellent perovskite films, offering a promising strategy for the development of high performance perovskite solar cells.

A pair of enantiomerically pure cobalt phosphonates were reported, namely, R(S)-Co3(2-ppap)2(1,3′-dpp)2(H2O)2·2H2O (R-1 or S-1), where 2-ppapH3 is 3-phenyl-2-［(phosphonomethyl)amino］propanoic acid, and 1,3′-dpp is 1,3-di(4-pyridyl)propane. It shows layer structures, where the {Co1O4N2} octahedral, {Co2O3N2}, and {Co3O3N2} trigonal-bipyramidal are each involved in corner sharing with {PO3C} tetrahedra with formation of inorganic metal chains containing 8-member rings. The inorganic metal chains are crossed-linked through 1,3′-dpp, forming a supramolecular layer in the ac plane. The thermal analysis, and optically active properties of compounds R-1 and S-1 were investigated.

Based on the single wall carbon nanotubes (SWNTs) films prepared by chemical vapor deposition, a flexible strain sensor with sandwich structure was prepared using polydimethylsiloxane (PDMS) as substrate, which has outstanding optical transparency and resistance response. The effects of different SWNTs layers on sensor performance were investigated. The experiments show that with the increase of the SWNTs film layers, light transmittance and resistance response of the strain sensor gradually reduces. The strain sensor obtained from a single layer of SWNTs film has the largest change of resistance, which amount to 100% at strain of 10%, even at small strain (2%) still detect a significant change in resistance (18%). The strain sensor has excellent outstanding durability and is used to detect the motion state of human body, it has potential applications in the areas of flexible electronic skin.

A method was designed to fabricate CNTs/PVA hollow helical fiber by controlling the diameter of titanium wire and the carbon nanotube bundles. The resistance of CNTs/PVA hollow helical fiber remaines the same when bending the original 1/3 or stretching to a strain of 100%. The maximum tensile strain of CNTs/PVA hollow helical fiber can reach 600%. After annealing at 500 ℃ for 30 min in argon gas, the residual strain of CNTs/PVA hollow helical fiber reduces from 22% to 2% under 30% strain cycle, improving the mechanical properties.

In order to investigate the effect of precursor powders on the electrochemical performance of Ag/AgCl electrodes, AgCl powder was prepared by adding surfactant and different drying methods using solid-phase ball milling method. An optimized preparation process was found, and Ag/AgCl porous electrode was prepared. The microstructure of the powder was analyzed and characterized by SEM and XRD; the electrochemical performance of the electrode was tested by the eDAQ electrochemical workstation and low-noise preamp noise test device to test, and the effect of microstructure on the polarization performance, short-term stability and electrochemical noise level of the electrode were discussed，and its external electric field response performance was tested. The results show that AgCl powder prepared by freeze-drying method with CTAC (cetyltrimethylammonium chloride) ball mill added to solid phase mill for 4 h has good dispersibility, uniform morphology and particle size below 1 μm; The prepared composite Ag/AgCl electrode has a porous structure with an open porosity of about 32.78%; the electrode has a large exchange current density of about 1.003 5 A·cm-2, which is not easily polarized; the two electrodes have good consistency and a small potential difference about 0.005 mV; the electrode has excellent short-term stability, the electrode potential fluctuation does not exceed 0.01 mV/24 h, and the power spectral density can be as low as 1.02 nV/Hz at 1 Hz frequency, which provides an extremely favorable test basis for underwater weak electric field detection.

The nano Co0.5Zn0.5Fe2O4 powder was synthesized by hydrothermal method. The effects of the process conditions(crystallization time, crystallization temperature) on the phase, morphology and absorbing properties of Co0.5Zn0.5Fe2O4 were studied by X-ray diffraction(XRD), Transmission electron microscope (TEM) and Vector network analyzer(VNA). The results suggest that pure-phase nano Co0.5Zn0.5Fe2O4 with spinel structure is prepared when the crystallization time is 8 h and the crystallization temperature is 180 ℃. The morphology of the sample is spherical with an average particle size of 10-15 nm. In the 1-18 GHz, the reflectivity of the sample at 16.47 GHz reaches -33.9 dB, and the absorption performance is the best.

The content of ammonia nitrogen and Chemical Oxygen Demand(COD) in coking wastewater cannot meet the discharge and reuse standards through biochemical treatment. Zero discharge of wastewater was acheived by electorchemical degradation using modified lead dioxide electrode (ESIXPb-I). At the same time, the effects of current density, initial pH value and chloride concentration on degradation of coking wastewater were explored. The results show that the ESIXPb-I electrode improves the stability and oxygen evolution potential of the Ti/PbO2 electrode, and significantly reduces the charge transfer resistance and membrane resistance. Furthermore, the removal efficiency of both ammonia nitrogen and COD reaches 100% after degradation of coking wastewater by ESIXPb-I electrode for 30 min, which is in accordance with pseudo-first-order kinetics.

Zn ions doped hydroxyapatite can not only give rise to the change in the crystal structure and microstructure of whiskers, but also affect their thermal stability and other biological properties. In this paper, zinc doped HA (Zn-HA) whiskers were successfully prepared by hydrothermal method, and their crystal structure, forming process, thermal stability and the crystalline morphology were studied by XRD, FTIR and SEM. It is shown that Zn-HA whiskers with single phase could be obtained when the Zn2+ doping content is less than 5%; when the Zn2+doping content is 5%, a small amount of impurity phase CaZn2(PO4)2·2H2O begin to appear in the products; when doping content is 8%, a significant Zn(PO3)2 impurity peaks appear. As hydrothermal temperature increases, the OH- in the solution releases continuously, and accompanying the formation and growth of HA crystal nucleus, there are little CaZn2(PO4)2·2H2O and Ca3(PO4)2 impurity phase, and Zn-HA is formed by dissolution and precipitation. When the doping amount of Zn2+ is within 0-8%, the crystallinity of the products gradually decreases with the Zn2+ doping amount increases, giving a slight increase in the cell parameters a and c basically unchanged. Zn2+ doped HA whiskers are heat treated in >800 ℃ environment. The increase of Zn2+ doping and the change of heat treatment temperature can promote the transformation of HA whisker to β-TCP forming biphasic calcium phosphate.

Oxygen evolution reaction (OER) is considered as the bottleneck half reaction in water splitting, owing to it involves transfer of multiple electrons and the kinetics is slow. Therefore, the development of efficient and stable electrocatalysts for OER and the reduction of the applied overpotential are the key to the development of water splitting technology. In this work, porous amorphous NiCo oxide catalyst for OER was fabricated by simple chemical bath deposition and low-temperature roasting method, using this preparation method, yielding amorphous NiCo oxide with quality up to gram level. Amorphous NiCo oxide exhibites excellent OER performance than its crystalline counterpart NiCo2O4 spinel oxide due to its oxygen vacancy. The holey amorphous NiCo oxide exhibites a low overpotential of 370 mV at current density of 10 mA/cm2 and excellent stability in 0.1 mol/L KOH while maintains remarkable durability.

Silica/mullite ceramic cores were prepared using fused mullite and sintered mullite powders as mineralizer in silica-based ceramic cores, and compared with ceramic cores without mineralizers. Compared to fused mullite, the sintered mullite powders have large contents of impurities including alkali metals and alkaline-earth metals, and highly promote the crystallization of silica glass and significantly decreased the activation energy for crystallization; however, the excess impurities acted as network modifiers, and increased the creep deformation at high temperature. The fused mullite can not only improve the crystallization of silica glass, but also benefit the resistance to high temperature deformation. The ceramic cores with 10wt% fused mullite show linear shrinkage of 0.73%, porosity of 30.5%, room temperature strength of 18.9 MPa, high temperature creep deformation of 0.3 mm, which will meet the demands for hollow blade casting.

Calcium element can effectively be leached out and carbon dioxide can be sequestered on the spot to prepare commercial calcium carbonate through leaching of steel slag by ammonium chloride. Due to the decrease of CaO content in steel slag leached by ammonium, there is no need to use a lot of modification agent to reduce and extract iron and prepare glass-ceramics. Therefore, thermodynamic calculation was introduced to explore the feasibility of extracting iron from ammonium leaching steel slag and preparing glass-ceramics. The preliminary results shows that for the mixture of steel slag leached by ammonium chloride and 40wt% SiO2, the reduction rate of iron is as high as 98.47%, and the main phases of reducing residues is diopside; the main crystal phase of glass ceramics is diopside mixed up with some calcium feldspar by nucleation for 1 h at 800 ℃ and crystallization for 1 h at 960 ℃; and the crystallization activation energy of base glass is 597.4 kJ/mol, and the crystal growth indexes are all less than three, indicating surface crystallization.

This experiment samples were analysed by DSC, colorimeter, XRD, SEM and other instruments to explore the effect of sintering system on the phase-separated opaque glaze and its effect mechanism in R2O-CaO-Al2O3-B2O3-SiO2 system. The results show that the change of heating-rate affects the diffusion and migration time of the components in the glaze, causing the size distribution, average particle size and volume fraction of the phase-separated droplets change, resulting the glazed surface exhibits opaque blue and white effects. Increasing the firing-temperature can promote the mutual diffusion of the components in the glaze, and the bright opaque glaze with whiteness ≥70% can be obtained in the range of 1 160-1 220 ℃. Higher firing- temperature tends to cause the pinhole defects in the glaze surface. The phase separation of the glaze melt occurs continuously under the interaction of thermodynamics and kinetics of glaze melt during the cooling process, meanwhile, the final composition, morphology and size of the phase-separated droplets are in a momentary equilibrium state during the cooling process. Therefore, the cooling process has an important effect on the phase-separated opaque glaze.

With the development of environmental compatibility, thermoelectric materials are required high performance coupled with environmental friendly elements. Therefore, GeTe materials have been widely studied as an ideal alternative to PbTe alloys owing to their non-toxic characteristics. In recent years, the doping method is considered to be the main way. Due to the limitations of single element doping, double elements doping have become the leading ways. Meanwhile, the Pb elements have gradually replaced by Sb, Bi and etc. This paper has introduced the crystal structures as well as band structures. Moreover, the optimization methods have been summarized as well, including carrier concentration optimization, energy band engineering and structure control. Nowadays, the GeTe thermoelectric devices are mainly p-type legs, while the n-type of GeTe-based alloys are required for further research. Furthermore, the fracture of the interface in thermoelectric devices caused by phase transition should be solved in the near future.

Graphene and its composites have received widespread attention in the field of energy storage as a new functional material. Compared with other preparation methods, electrochemical preparation technology has the advantages of safety, high efficiency and green. This article reviews the research progress of electrochemical methods for the preparation of graphene/nanometal composites, graphene/metal oxide (hydroxide) composites, graphene/polymer composites, and their applications in supercapacitors, in order to provide a reference for the research on electrochemical preparation of graphene and its composites in the field of superelectricity.

Aluminum borate whiskers have received widespread attention because of their advantages, such as high melting point, close strength to perfect crystal, wear resistance, high temperature resistance, corrosion resistance, electrical insulation and relatively cheap prices, which was widely used as a reinforcement in polymer materials, metal materials, ceramics, wave transmitting materials, coatings and other fields. The paper summarized the domestic and foreign research advances in aluminum borate whiskers in terms of properties, applications, synthesis mechanisms, preparation methods, etc., and provided guidance for the further preparation and application of the aluminum borate whiskers.<收稿日期