Journal of Synthetic Crystals, Volume. 49, Issue 5, 794(2020)

Orientation Evolution Study of Epitaxial GaN Films on Graphene

ZHOU Hao1...2, XU Yu3, CAO Bing1,2, XU Ke3, and WANG Chinhua12 |Show fewer author(s)
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  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    The evolution of crystal orientation of GaN films grown on graphene was investigated. Assisted with AlN nucleation layer, GaN was gradually merged with grains which had the same orientation of graphene from smaller polycrystalline grains. Finally, a GaN film with a thickness of about 4.6 μm was formed. EBSD and XRD have confirmed that the overall orientation of GaN becomes consistent, and Raman spectrum also shows the high crystalline quality of the GaN.

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    ZHOU Hao, XU Yu, CAO Bing, XU Ke, WANG Chinhua. Orientation Evolution Study of Epitaxial GaN Films on Graphene[J]. Journal of Synthetic Crystals, 2020, 49(5): 794

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    Received: --

    Accepted: --

    Published Online: Aug. 6, 2020

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    CSTR:32186.14.

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