Journals Articles Conferences News About CLP
Submit a paper Email Alert
Search
Search
Articles
Journals
News
Advanced Search
Top Searches
2D MaterialsTransformation opticsQuantum PhotonicsSmall lasersSemiconductor UV PhotonicsSupersymmetric microring laser arrays

Chinese Optics, Volume. 18, Issue 3, 499(2025)

Numerical simulations on the photoelectric performance of AlGaN-based ultraviolet VCSELs with a slope-shaped p-type layer

Xin-xin WEN1, Wei JIA1、*, Guang-mei ZHAI1, Hai-liang DONG1, Chao ZHAO1, Tian-bao LI1, and Bing-she XU1,2,3
Author Affiliations
  • 1Key Laboratory of Interface Science and Engineering in Advanced Materials Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, China
  • 2Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan 030001, China
  • 3Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology, Xi’an 710021, China
    • show less
    AbstractGet PDF(in Chinese)
    Figures&Tables (7)
    Equations (2)
    References (39)
    Tools
    Paper Information
    Topics
    References(39)

    [1] TAKEUCHI T, KAMIYAMA S, IWAYA M et al. GaN-based vertical-cavity surface-emitting lasers with AlInN/GaN distributed Bragg reflectors[J]. Reports on Progress in Physics, 82, 012502(2019).

    [2] CHEN Y H, MEI Y, ZHENG ZH M et al. Effects of different current confinement layers in GaN-based VCSELs[J]. AIP Advances, 13, 075114(2023).

    [3] XU R B, MEI Y, XU H et al. Effects of lateral optical confinement in GaN VCSELs with double dielectric DBRs[J]. IEEE Photonics Journal, 12, 1501708(2020).

    [4] ELAFANDY R T, KANG J H, MI CH Z Y et al. Study and application of birefringent nanoporous GaN in the polarization control of blue vertical-cavity surface-emitting lasers[J]. ACS Photonics, 8, 1041-1047(2021).

    [5] ELAFANDY R T, KANG J H, LI B J et al. Room-temperature operation of c-plane GaN vertical cavity surface emitting laser on conductive nanoporous distributed Bragg reflector[J]. Applied Physics Lettrers, 117, 011101(2020).

    [6] HAYASHI K, HAMAGUCHI T, KEARNS J A et al. Narrow emission of blue GaN-based vertical-cavity surface-emitting lasers with a curved mirror[J]. IEEE Photonics Jouranl, 14, 1536905(2022).

    [7] LEONARD J T, YOUNG E C, YONKEE B P et al. Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts[J]. Proceedings of SPIE, 9748, 97481B(2016).

    [8] YANG J, ZHAO D G, LIU Z SH et al. Room temperature continuous-wave operated 2.0-W GaN-based ultraviolet laser diodes[J]. Optics Letters, 47, 1666-1668(2022).

    [9] YANG J, ZHAO D G, LIU Z SH et al. A 357.9 nm GaN/AlGaN multiple quantum well ultraviolet laser diode[J]. Jouranl of Semiconductors, 43, 010501(2022).

    [10] ZHENG ZH M, WANG Y K, HOO J et al. High-quality AlGaN epitaxial structures and realization of UVC vertical-cavity surface-emitting lasers[J]. Science China Materials, 66, 1978-1988(2023).

    [11] WANG Y K, ZHENG ZH M, LONG H et al. Development and challenges of nitride vertical-cavity surface-emitting lasers (invited)[J]. Acta Photonica Sinica, 51, 0251203(2022).

    [12] QIU X J, ZHANG Y H, HANG SH et al. Enhancing the lateral current injection by modulating the doping type in the p-type hole injection layer for InGaN/GaN vertical cavity surface emitting lasers[J]. Optics Express, 28, 18035-18048(2020).

    [13] HAN L, GAO Y B, HANG SH et al. Impact of p-AlGaN/GaN hole injection layer on GaN-based vertical cavity surface emitting laser diodes [invited][J]. Chinese Optics Letters, 20, 031402(2022).

    [14] PENG F, YANG CH, DENG S Y et al. Simulation of a high-performance enhancement-mode HFET with back-to-back graded AlGaN layers[J]. Science China Information Sciences, 62, 62403(2019).

    [15] VERMA J, ISLAM S M, PROTASENKO V et al. Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures[J]. Applied Physics Letters, 104, 021105(2014).

    [16] ZHANG L, DING K, YAN J C et al. Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face III-nitride structure[J]. Applied Physics Letters, 97, 062103(2010).

    [17] ZHANG H CH, HUANG CH, SONG K et al. Compositionally graded III-nitride alloys: building blocks for efficient ultraviolet optoelectronics and power electronics[J]. Reports on Progress in Physics, 84, 044401(2021).

    [18] XING ZH Y, ZHANG H CH, SUN Y et al. Normally-OFF AlGaN/GaN-based HEMTs with decreasingly graded AlGaN cap layer[J]. Journal of Physics D: Applied Physics, 56, 025105(2023).

    [19] ZHANG H CH, LIANG F ZH, YANG L et al. Superior AlGaN/GaN-based phototransistors and arrays with reconfigurable triple-mode functionalities enabled by voltage-programmed two-dimensional electron gas for high-quality imaging[J]. Advanced Materials, 36, 2405874(2024).

    [20] KOLBE T, KNAUER A, RASS J et al. 234 nm far-ultraviolet-C light-emitting diodes with polarization-doped hole injection layer[J]. Applied Physics Letters, 122, 191101(2023).

    [21] SATTER M, LOCHNER Z, KAO T T et al. AlGaN-based vertical injection laser diodes using inverse tapered p-waveguide for efficient hole transport[J]. IEEE Journal of Quantum Electronics, 50, 166-173(2014).

    [22] LIU Y S, KAO T T, SATTER M et al. Inverse-tapered p-waveguide for vertical hole transport in high-[Al] AlGaN emitters[J]. IEEE Photonics Technology Letters, 27, 1768-1771(2015).

    [23] LU L, DING G G, ZHANG Y et al. Improved performance of AlGaN-based deep ultraviolet light-emitting diode using modulated-taper design for p-AlGaN layer[J]. Semiconductor Science and Technology, 33, 035008(2018).

    [24] LUO H W, LI J Z, LI M. Improved output power of GaN-based VCSEL with band-engineered electron blocking layer[J]. Micromachines, 10, 694(2019).

    [25] CHENG CH, LEI Y, LIU ZH Q et al. Performance improvement of light-emitting diodes with double superlattices confinement layer[J]. Journal of Semiconductors, 39, 114005(2018).

    [26] MONDAL R K, CHATTERJEE V, PAL S. Effect of step-graded superlattice electron blocking layer on performance of AlGaN based deep-UV light emitting diodes[J]. Physica E: Low-Dimensional Systems and Nanostructures, 108, 233-237(2019).

    [27] YANG W, LI D, LIU N Y et al. Improvement of hole injection and electron overflow by a tapered AlGaN electron blocking layer in InGaN-based blue laser diodes[J]. Applied Physics Letters, 100, 031105(2012).

    [28] WANG Y F, NIASS M I, WANG F et al. Improvement of radiative recombination rate in deep ultraviolet laser diodes with step-like quantum barrier and aluminum-content graded electron blocking layer[J]. Chinese Physics B, 29, 017301(2020).

    [29] AZOFF E M. Closed-form method for solving the steady-state generalised energy-momentum conservation equations[J]. COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, 6, 25-30(1987).

    [30] TURIN V O. A modified transferred-electron high-field mobility model for GaN devices simulation[J]. Solid-State Electronics, 49, 1678-1682(2005).

    [31] PELA R R, HSIAO C L, HULTMAN L et al. Electronic and optical properties of core-shell InAlN nanorods: a comparative study via LDA, LDA-1/2, mBJ, HSE06, G0W0 and BSE methods[J]. Physical Chemistry Chemical Physics, 26, 7504-7514(2024).

    [32] CHUANG CH M, CHENG Y H, WU Y R. Electro-optical numerical modeling for the design of UVA nitride-based vertical-cavity surface-emitting laser diodes[J]. IEEE Journal of Selected Topics in Quantum Electronics, 28, 1700606(2022).

    [33] LAI C Y, HSU T M, CHANG W H et al. Direct measurement of piezoelectric field in In0.23Ga0.77N/GaN multiple quantum wells by electrotransmission spectroscopy[J]. Journal of Applied Physics, 91, 531-533(2002).

    [34] GAO Y B, CHU CH SH, HANG SH et al. Quantum barriers with a polarization self-screening effect for GaN-based VCSELs to increase the electron-hole stimulated recombination and output performance[J]. Optical Materials Express, 11, 3984-3995(2021).

    [35] HADLEY G R, LEAR K L, WARREN M E et al. Comprehensive numerical modeling of vertical-cavity surface-emitting lasers[J]. IEEE Journal of Quantum Electronics, 32, 607-616(1996).

    [36] HAN S H, LEE D Y, LEE S J et al. Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes[J]. Applied Physics Letters, 94, 231123(2009).

    [37] LI SH B, WARE M, WU J et al. Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN[J]. Applied Physics Letters, 101, 122103(2012).

    [38] BAO X L, SUN P, LIU S Q et al. Performance improvements for AlGaN-based deep ultraviolet light-emitting diodes with the p-type and thickened last quantum barrier[J]. IEEE Photonics Journal, 7, 1400110(2015).

    [39] SI Q Y, CHEN H Y, LI SH P et al. Improved characteristics of AlGaN-based deep ultraviolet light-emitting diodes with superlattice p-type doping[J]. IEEE Photonics Journal, 9, 2200807(2017).

    Tools

    Get Citation

    Copy Citation Text

    Xin-xin WEN, Wei JIA, Guang-mei ZHAI, Hai-liang DONG, Chao ZHAO, Tian-bao LI, Bing-she XU. Numerical simulations on the photoelectric performance of AlGaN-based ultraviolet VCSELs with a slope-shaped p-type layer[J]. Chinese Optics, 2025, 18(3): 499

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Set citation alerts for article
    Save article for my favorites
    Paper Information

    Category:

    Received: Aug. 28, 2024

    Accepted: Oct. 14, 2024

    Published Online: Jun. 16, 2025

    The Author Email: Wei JIA (jiawei@tyut.edu.cn)

    DOI:10.37188/CO.EN-2024-0027

    Topics