Fig. 1. Structure of GaN-based VCSELs

Fig. 2. I-V and L-I characteristic plots of GaN-based VCSELs at 20 mA

Fig. 3. (a) Radial hole concentrations in MQWs and (b) radial hole current densities for different structures at 20 mA

Fig. 4. (a) Radial electron concentration distributions of MQWs and (b) radial electron current density distributions in different structures at 20 mA

Fig. 5. Stimulated recombination rates in the active region for different structures at 20 mA

Fig. 6. Relationship between WPE and the injection current

Fig. 7. Energy band diagrams of the active region and p-type doping regions of structures A, B, C, and D at 20 mA