Achieving over 95% yield of sub-1 ppm BER with retention over 10 years at 125 °C and endurance of 1 × 10<sup>12</sup> cycles towards automotive non-volatile RAM applications

Dinggui Zeng; Fantao Meng; Ruofei Chen; Yang Gao; Yihui Sun; Junlu Gong; Yongzhao Peng; Qijun Guo; Zhixiao Deng; Weiming He; Baoyu Xiong; Jia Hou; Jichao Li; Wei Fang; Qiang Dai; Yaohua Wang; Shikun He

doi:10.1088/1674-4926/24090037

Journal of Semiconductors, Volume. 46, Issue 3, 032301(2025)

Achieving over 95% yield of sub-1 ppm BER with retention over 10 years at 125 °C and endurance of 1 × 10¹² cycles towards automotive non-volatile RAM applications

Dinggui Zeng^*, Fantao Meng, Ruofei Chen, Yang Gao, Yihui Sun, Junlu Gong, Yongzhao Peng, Qijun Guo, Zhixiao Deng, Weiming He, Baoyu Xiong, Jia Hou, Jichao Li, Wei Fang, Qiang Dai, Yaohua Wang, and Shikun He^*

Author Affiliations

Zhejiang Hikstor Technology Company Ltd., Hangzhou 311300, China

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References(17)

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[6] Y C Shih, C F Lee, Y Chang et al. A reflow-capable, embedded 8Mb STT-MRAM macro with 9ns read access time in 16nm FinFET logic CMOS process. 2020 IEEE International Electron Devices Meeting (IEDM), 11.4.1(2020).

[7] S Jung, H Lee, S Myung et al. A crossbar array of magnetoresistive memory devices for in-memory computing. Nature, 601, 211(2022).

[8] W J Gallagher, E Chien, T W Chiang et al. 22nm STT-MRAM for reflow and automotive uses with high yield, reliability, and magnetic immunity and with performance and shielding options. 2019 IEEE International Electron Devices Meeting (IEDM), 2.7.1(2019).

[9] V B Naik, K Yamane, T Y Lee et al. JEDEC-qualified highly reliable 22nm FD-SOI embedded MRAM for low-power industrial-grade, and extended performance towards automotive-grade-1 applications. 2020 IEEE International Electron Devices Meeting (IEDM), 11.3.1(2020).

[10] P H Lee, C F Lee, Y C Shih et al. A 16nm 32Mb embedded STT-MRAM with a 6ns read-access time, a 1M-cycle write endurance, 20-year retention at 150°C and MTJ-OTP solutions for magnetic immunity. 2023 IEEE International Solid-State Circuits Conference (ISSCC), 494(2023).

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[12] J Oh, J Park, K Suh et al. 14nm FinFET node embedded MRAM technology for automotive non-volatile RAM applications with endurance over 1E12-cycles. 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 1(2024).

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Dinggui Zeng, Fantao Meng, Ruofei Chen, Yang Gao, Yihui Sun, Junlu Gong, Yongzhao Peng, Qijun Guo, Zhixiao Deng, Weiming He, Baoyu Xiong, Jia Hou, Jichao Li, Wei Fang, Qiang Dai, Yaohua Wang, Shikun He. Achieving over 95% yield of sub-1 ppm BER with retention over 10 years at 125 °C and endurance of 1 × 10¹² cycles towards automotive non-volatile RAM applications[J]. Journal of Semiconductors, 2025, 46(3): 032301

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Paper Information

Category: Research Articles

Received: Sep. 19, 2024

Accepted: --

Published Online: Apr. 27, 2025

The Author Email: Dinggui Zeng (DGZeng), Shikun He (SKHe)

DOI:10.1088/1674-4926/24090037

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laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology