Laser & Optoelectronics Progress, Volume. 57, Issue 3, 032501(2020)
Ion Beam Polishing Equivalent Removal and Polishing Experiments
Fig. 3. Simulation of different stacking spacings. (a) Stacking spacing is σ; (b) stacking spacing is 1.5σ; (c) stacking spacing is 2σ
Fig. 5. One-dimensional equivalent-etching results of ion beams with different stacking spacings. (a) Stacking spacing is σ; (b) stacking spacing is 1.2σ; (c) stacking spacing is 1.5σ
Fig. 6. One-dimensional equivalent removal contour of ion beams with different stacking spacings. (a) Stacking spacing is σ; (b) stacking spacing is 1.2σ; (c) stacking spacing is 1.5σ
Fig. 7. Simulation of two-dimensional equivalent removal. (a) Top view; (b) side view
Fig. 8. Two-dimensional equivalent removal results. (a) Etching result; (b) etching profile
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Yuning Wang, Shilei Jiang, Guobin Sun, Weiguo Liu, Xiaogang Dang. Ion Beam Polishing Equivalent Removal and Polishing Experiments[J]. Laser & Optoelectronics Progress, 2020, 57(3): 032501
Category: OPTOELECTRONICS
Received: Sep. 20, 2019
Accepted: Nov. 13, 2019
Published Online: Feb. 17, 2020
The Author Email: Jiang Shilei (jiangshilei8@163.com)