[1] Y Liu, J X Xiong, Z Wang et al. Electric dipole spin resonance induced by hole k-linear Rashba effect in planar Ge(2021).

[2] C Zhao, X Wang, W Wang. High-κ dielectric and metal gate. CMOS Past, Present and Future. Amsterdam: Elsevier, 69(2018).

[3] G Scappucci, C Kloeffel, F A Zwanenburg et al. The germanium quantum information route. Nat Rev Mater, 6, 926(2021).

[4] M Lodari, O Kong, M Rendell et al. Lightly strained germanium quantum wells with hole mobility exceeding one million. Appl Phys Lett, 120, 122104(2022).

[5] M Myronov, J Kycia, P Waldron et al. Holes outperform electrons in group IV semiconductor materials. Small Sci, 3, 2200094(2023).

[6] T A Hutchins-Delgado, A J Miller, R Scott et al. Characterization of shallow, undoped Ge/SiGe quantum wells commercially grown on 8-in. (100) Si wafers. ACS Appl Electron Mater, 4, 4482(2022).

[7] Z Kong, Z Li, G Cao et al. Undoped strained Ge quantum well with ultrahigh mobility of two million. ACS Appl Mater Interfaces, 15, 28799(2023).

[8] L E A Stehouwer, A Tosato, D Degli Esposti et al. Germanium wafers for strained quantum wells with low disorder. Appl Phys Lett, 123, 092101(2023).

[9] A Sammak, D Sabbagh, N W Hendrickx et al. Shallow and undoped germanium quantum wells: A playground for spin and hybrid quantum technology. Adv Funct Mater, 29, 1807613(2019).

[10] N W Hendrickx, W I L Lawrie, M Russ et al. A four-qubit germanium quantum processor. Nature, 591, 580(2021).

[11] Y X Li, Z Z Kong, S M Hou et al. Quantum transport quality of a processed undoped Ge/SiGe heterostructure. Phys Rev B, 108, 045303(2023).

[12] R L Ma, A R Li, C Wang et al. Single-spin-qubit geometric gate in a silicon quantum dot. Phys Rev Applied, 21, 014044(2024).

[13] J Yoneda, K Takeda, T Otsuka et al. A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9. Nat Nanotechnol, 13, 102(2018).

[14] W J Hardy, C T Harris, Y H Su et al. Single and double hole quantum dots in strained Ge/SiGe quantum wells. Nanotechnology, 30, 215202(2019).

[15] L A Terrazos, E Marcellina, Z N Wang et al. Theory of hole-spin qubits in strained germanium quantum dots. Phys Rev B, 103, 125201(2021).

[16] D D Zhang, J Lu, Z Liu et al. Sharp interface of undoped Ge/SiGe quantum well grown by ultrahigh vacuum chemical vapor deposition. Appl Phys Lett, 121, 022102(2022).

[17] Y Kang, Z H Li, Z Z Kong et al. Coupling of a hole double quantum dot in planar germanium to a microwave cavity. Phys Rev Applied, 22, 024054(2024).

[18] D Jirovec, A Hofmann, A Ballabio et al. A singlet-triplet hole spin qubit in planar Ge. Nat Mater, 20, 1106(2021).

[19] Y W Zhang, Z H Li, Y C Zhou et al. Ultrashallow heavily constrained quantum wells: The cradle for fully electrically controlled and microwave coupled quantum bits. Phys Rev Materials, 8, 046203(2024).

[20] I B Berkutov, V V Andrievskii, E Y Beliayev et al. Quantum effects in silicon-germanium p-type heterostructures with quantum wells of different widths. Low Temp Phys, 49, 59(2023).

[21] D Laroche, S H Huang, Y Chuang et al. Magneto-transport analysis of an ultra-low-density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure. Appl Phys Lett, 108, 233504(2016).

[22] Y H Su, Y Chuang, C Y Liu et al. Effects of surface tunneling of two-dimensional hole gases in undoped Ge/GeSi heterostructures. Phys Rev Materials, 1, 044601(2017).

[23] J M Hartmann, J F Damlencourt, Y Bogumilowicz et al. Reduced pressure-chemical vapor deposition of intrinsic and doped Ge layers on Si(001) for microelectronics and optoelectronics purposes. J Cryst Growth, 274, 90(2005).

[24] O Newell. Fractional quantum phenomena of 2DHGs within strained germanium quantum well heterostructures(2018).

[25] T Ward, A M Sánchez, M Tang et al. Design rules for dislocation filters. J Appl Phys, 116, 063508(2014).

[26] E A Fitzgerald. Dislocations in strained-layer epitaxy: Theory, experiment, and applications. Mater Sci Rep, 7, 87(1991).

[27] A Ballabio, J Frigerio, S Firoozabadi et al. Ge/SiGe parabolic quantum wells. J Phys D: Appl Phys, 52, 415105(2019).

[28] M M Alam, Y Hoshi, K Sawano. Structural properties of compressive strained Ge channels fabricated on Si (111) and Si (100). Semicond Sci Technol, 33, 124008(2018).

[29] O Skibitzki, M H Zoellner, F Rovaris et al. Reduction of threading dislocation density beyond the saturation limit by optimized reverse grading. Phys Rev Materials, 4, 103403(2020).

[30] W J Cheng, R R Liang, G B Xu et al. Fabrication and characterization of a novel Si line tunneling TFET with high drive current. IEEE J Electron Devices Soc, 8, 336(2826).

[31] G L Wang, J Luo, C L Qin et al. Integration of highly strained SiGe in source and drain with HK and MG for 22 nm bulk PMOS transistors. Nanoscale Res Lett, 12, 123(2017).

[32] Känel H von, M Kummer, G Isella et al. Very high hole mobilities in modulation-doped Ge quantum wells grown by low-energy plasma enhanced chemical vapor deposition. Appl Phys Lett, 80, 2922(2002).

[33] B Rößner, G Isella, Känel H von. Effective mass in remotely doped Ge quantum wells. Appl Phys Lett, 82, 754(2003).

[34] S I Pokutnyi. Polarizability of germanium quantum dots with spatially separated electrons and holes. Eur Phys J Plus, 135, 74(2020).

[35] M J Rančić, S Hoffman, C Schrade et al. Entangling spins in double quantum dots and Majorana bound states. Phys Rev B, 99, 165306(2019).

[36] P Del Vecchio, M Lodari, A Sammak et al. Vanishing Zeeman energy in a two-dimensional hole gas. Phys Rev B, 102, 115304(2020).

[37] P T Coleridge, R Stoner, R Fletcher. Low-field transport coefficients in GaAs/Ga1–xAlxAs heterostructures. Phys Rev B, 39, 1120(1989).

[38] R Winkler, S J Papadakis, E P Poortere et al. Spin-orbit coupling in two-dimensional electron and hole systems. Advances in Solid State Physics, 41, 211(2007).

[39] A J Miller, M Brickson, W J Hardy et al. Effective out-of-plane g-factor in strained-Ge/SiGe quantum dots. Phys Rev B, 106, 121402(2022).

[40] I L Drichko, A A Dmitriev, V A Malysh et al. Effective g factor of 2D holes in strained Ge quantum wells. J Appl Phys, 123, 165703(2018).

[41] R Mizokuchi, R Maurand, F Vigneau et al. Ballistic one-dimensional holes with strong g-factor anisotropy in germanium. Nano Lett, 18, 4861(2018).

[42] J L Ma, H M Zhang, X Y Wang et al. Valence band structure and hole effective mass of uniaxial stressed Germanium. J Comput Electron, 10, 388(2011).

[43] M Virgilio, G Grosso. Type-I alignment and direct fundamental gap in SiGe based heterostructures. J Phys Condens Matter, 18, 1021(2006).