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Microelectronics, Volume. 51, Issue 6, 923(2021)

Simulation Study on In04Ga06N/GaN Heterojunction IMPATT Diode

DAI Yang1, LU Zhaoyang1, YE Qingsong1, DANG Jiangtao1, LEI Xiaoyi1, ZHANG Yunyao1, LIAO Chenguang1, ZHAO Shenglei2, and ZHAO Wu1
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    DAI Yang, LU Zhaoyang, YE Qingsong, DANG Jiangtao, LEI Xiaoyi, ZHANG Yunyao, LIAO Chenguang, ZHAO Shenglei, ZHAO Wu. Simulation Study on In04Ga06N/GaN Heterojunction IMPATT Diode[J]. Microelectronics, 2021, 51(6): 923

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    Received: Mar. 26, 2021

    Accepted: --

    Published Online: Feb. 14, 2022

    The Author Email:

    DOI:10.13911/j.cnki.1004-3365.210120

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology