Chinese Optics, Volume. 16, Issue 5, 1149(2023)

Relationship between the preparation process of the graphene/silicon hetero-junction photodetector and its voltage-current characteristics

Ya-xian YANG and Guo-qing ZHANG*
Author Affiliations
  • School of Science, Xi'an Polytechnic University, Xi'an 710048, China
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    References(24)

    [1] [1] ZHU M. Study on the graphenesilicon heterojucntion photodetects[D]. Beijing: Tsinghua University, 2015. (in Chinese)

    [5] YIN J, LIU L, ZANG Y SH, et al. Engineered tunneling layer with enhanced impact ionization for detection improvement in graphene/silicon heterojunction photodetectors[J]. Light:Science & Applications, 10, 113(2021).

    [7] [7] WANG X J. Twodimensional nanomaterials f biosensing photosensing[D]. Shanghai: East China University of Science Technology, 2018. (in Chinese)

    [10] HAN T L, TANG L B, ZUO W B, . Research progress of graphene heterojunctions and their optoelectronic devices[J]. Infrared Technology, 43, 1141-1157(2021).

    [11] [11] DAVYDOVSKAYA D. Photoconductivity in highquality graphene[D]. Barcelona: Universitat Politècnica de Catalunya, 2015.

    [17] WU Y L, BI R K, ZHANG J, . Optimization of the wet transfer technique of graphene[J]. Micronanoelectronic Technology, 54, 565-569,579(2017).

    [19] [19] XU Y, WAN X, GUO H W, et al. . Avalanche photodetect preparation method based on graphenesilicasilicon: CN, 104300027A[P]. 20150121. (in Chinese)

    [20] [20] WANG X. Photodetects based on graphenesilicon schottky diode[D]. Hangzhou: Zhejiang University, 2016. (in Chinese)

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    Ya-xian YANG, Guo-qing ZHANG. Relationship between the preparation process of the graphene/silicon hetero-junction photodetector and its voltage-current characteristics[J]. Chinese Optics, 2023, 16(5): 1149

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    Paper Information

    Category: Original Article

    Received: Dec. 30, 2022

    Accepted: Mar. 21, 2023

    Published Online: Oct. 27, 2023

    The Author Email:

    DOI:10.37188/CO.2022-0259

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