Acta Optica Sinica, Volume. 42, Issue 1, 0116001(2022)

In-situ Photoelectron Spectroscopy of InGaAs Photocathode in Preparation Process

Shan Li1, Yijun Zhang1、*, Minmin Rong1, Shiman Li1, Feng Shi1, Gangcheng Jiao2, Ziheng Wang1, and Yunsheng Qian1
Author Affiliations
  • 1School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, China
  • 2Science and Technology on Low-Light-Level Night Vision Laboratory, Xi′an, Shaanxi 710065, China
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    Figures & Tables(10)
    XPS spectra of C1s and O1s at different heated temperatures. (a) C1s; (b) O1s
    XPS fitted spectra of Ga2p3 at different heating temperatures. (a) Sample a; (b) sample b; (c) sample c; (d) sample d; (e) sample e; (f) sample f
    XPS fitted spectra of As2p3 at different heating temperatures. (a) Sample a; (b) sample b; (c) sample c; (d) sample d; (e) sample e; (f) sample f
    XPS fitted spectra of In3d5 at different heating temperatures. (a) Sample a; (b) sample b; (c) sample c; (d) sample d; (e) sample e; (f) sample f
    UPS spectra and change trend of work function at different heating temperatures
    XPS spectra of C1s and O1s after different experimental steps. (a) C1s; (b) O1s
    XPS spectra of Ga2p3, As2p3, and In3d5 after different experimental steps. (a) Ga2p3; (b) As2p3; (c) In3d5
    UPS spectra and change trend of work function value after different experimental steps
    • Table 1. XPS fitted peak ratios of surface elements for samples after chemical cleaning and heat cleaning%

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      Table 1. XPS fitted peak ratios of surface elements for samples after chemical cleaning and heat cleaning%

      SampleC1sO1sGa-InAsGa2O3As-InGaAsAs2O3In-GaAsIn2O3
      Cleaned sample (25 ℃)15.918.7826.171.4121.0918.850.287.200.31
      Sample a (500 ℃)1.816.8944.951.3232.742.9309.090.27
      Sample b (525 ℃)1.025.8046.161.2034.032.1709.400.22
      Sample c (550 ℃)03.8047.860.9035.411.9209.940.17
      Sample d (575 ℃)01.6048.570.7237.371.11010.520.11
      Sample e (600 ℃)00.2849.450.1838.140.53011.420
      Sample f (625 ℃)0051.97039.60008.430
    • Table 2. Fitting peak ratio of surface elements of samples after different experimental steps%

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      Table 2. Fitting peak ratio of surface elements of samples after different experimental steps%

      StepC1sO1sGa2p3As2p3In3d5Cs3d
      Chemical cleaning13.8611.5925.8341.397.330
      Heat cleaning0049.7941.808.410
      Cs activation0045.7335.466.5612.25
      Cs/O activation020.4732.7616.656.0124.11
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    Shan Li, Yijun Zhang, Minmin Rong, Shiman Li, Feng Shi, Gangcheng Jiao, Ziheng Wang, Yunsheng Qian. In-situ Photoelectron Spectroscopy of InGaAs Photocathode in Preparation Process[J]. Acta Optica Sinica, 2022, 42(1): 0116001

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    Paper Information

    Category: Materials

    Received: May. 31, 2021

    Accepted: Jul. 13, 2021

    Published Online: Dec. 22, 2021

    The Author Email: Zhang Yijun (zhangyijun423@126.com)

    DOI:10.3788/AOS202242.0116001

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