[1] Janesick J, Putnam G. Developments and applications of high-performance CCD and CMOS imaging arrays[J]. Annual Review of Nuclear and Particle Science, 53, 263-300(2003).

[2] Maki J N, Gruel D, McKinney C et al. The Mars 2020 engineering cameras and microphone on the perseverance rover: a next-generation imaging system for Mars exploration[J]. Space Science Reviews, 216, 137(2020).

[3] Lofthouse-Smith D D, Soman M R, Allanwood E A H et al. Thermal annealing response following irradiation of a CMOS imager for the JUICE JANUS instrument[J]. Journal of Instrumentation, 13, C03036(2018).

[4] Xue Y Y, Wang Z J, Chen W et al. Proton radiation effects on dark signal distribution of PPD CMOS image sensors: both TID and DDD effects[J]. Sensors, 17, 2781(2017).

[5] Beaumel M, Hervé D, van Aken D et al. Proton, electron, and heavy ion single event effects on the HAS2 CMOS image sensor[J]. IEEE Transactions on Nuclear Science, 61, 1909-1917(2014).

[6] Sipos A, Grusell E, Kerek A et al. Visualization of neutron and proton induced particle production in a CMOS image sensor[J]. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 509, 328-332(2003).

[7] Virmontois C, Goiffon V, Magnan P et al. Displacement damage effects due to neutron and proton irradiations on CMOS image sensors manufactured in deep submicron technology[J]. IEEE Transactions on Nuclear Science, 57, 3101-3108(2010).

[8] Virmontois C, Goiffon V, Magnan P et al. Similarities between proton and neutron induced dark current distribution in CMOS image sensors[J]. IEEE Transactions on Nuclear Science, 59, 927-936(2012).

[9] Inguimbert C, Nuns T, Ursule M C et al. Modeling the dark current non-uniformity of image sensors with GEANT4[J]. IEEE Transactions on Nuclear Science, 61, 3323-3330(2014).

[10] Beaumel M, Hervé D, van Aken D. Cobalt-60, proton and electron irradiation of a radiation-hardened active pixel sensor[J]. IEEE Transactions on Nuclear Science, 57, 2056-2065(2010).

[11] Belloir J M, Goiffon V, Virmontois C et al. Dark current spectroscopy in neutron, proton and ion irradiated CMOS image sensors: from point defects to clusters[J]. IEEE Transactions on Nuclear Science, 64, 27-37(2017).

[12] Wang Z J, Xue Y Y, Chen W et al. Fixed pattern noise and temporal noise degradation induced by radiation effects in pinned photodiode CMOS image sensors[J]. IEEE Transactions on Nuclear Science, 65, 1264-1270(2018).

[13] Wang Z J, Xue Y Y, Guo X Q et al. Measurement and analysis of the conversion gain degradation of the CIS detectors in harsh radiation environments[J]. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 895, 35-39(2018).

[14] Wang Z J, Xue Y Y, Chen W et al. Comparison of the dark signal degradation induced by Gamma ray, proton, and neutron radiation in pinned photodiode CMOS image sensors[J]. Science China Information Sciences, 62, 69403(2019).

[15] Wang Z J, Yang X, Lai S K et al. Simulation of displacement damage of CMOS image sensors irradiated by neutron[J]. Modern Applied Physics, 13, 150-157(2022).

[16] Lai S K, Wang Z J, Huang G et al. A simulation result of trapped charge in PPD CIS induced by total ionizing dose effect[J]. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1050, 168069(2023).

[17] Liu B K, Li Y D, Wen L et al. Displacement damage effects in backside illuminated CMOS image sensors[J]. IEEE Transactions on Electron Devices, 69, 2907-2914(2022).

[18] Fu J, Feng J, Li Y D et al. Effect of proton beam irradiation on the tracking efficiency of CMOS image sensors[J]. Radiation Effects and Defects in Solids, 177, 590-603(2022).

[19] Liu B K, Li Y D, Wen L et al. Study of dark current random telegraph signal in proton-irradiated backside illuminated CMOS image sensors[J]. Results in Physics, 19, 103443(2020).

[20] Liu B K, Li Y D, Wen L et al. Effects of hot pixels on pixel performance on backside illuminated complementary metal oxide semiconductor (CMOS) image sensors[J]. Sensors, 23, 6159(2023).

[21] Li S M, Nie K M, Xu J T. Correlated multiple sampling technique for low-light CMOS image sensors[J]. Laser & Optoelectronics Progress, 60, 1228005(2023).

[22] European Machine Vision Association. Standard for characterization of image sensors and cameras:EMVA Standard[EB/OL](1288). https:∥www.emva.org/wp-content/uploads/EMVA1288-General-4.0ReleaseCandidate.pdf

[23] Roch A L, Virmontois C, Goiffon V et al. Radiation-induced leakage current and electric field enhancement in CMOS image sensor sense node floating diffusions[J]. IEEE Transactions on Nuclear Science, 65, 1645-1653(2018).

[24] Virmontois C, Goiffon V, Magnan P et al. Total ionizing dose versus displacement damage dose induced dark current random telegraph signals in CMOS image sensors[J]. IEEE Transactions on Nuclear Science, 58, 3085-3094(2011).

[25] Goiffon V, Hopkinson G R, Magnan P et al. Multilevel RTS in proton irradiated CMOS image sensors manufactured in a deep submicron technology[J]. IEEE Transactions on Nuclear Science, 56, 2132-2141(2009).

[26] Schwandt J, Fretwurst E, Garutti E et al. A new model for the TCAD simulation of the silicon damage by high fluence proton irradiation[C], 1-3(2018).

[27] Palko J W, Srour J R. Amorphous inclusions in irradiated silicon and their effects on material and device properties[J]. IEEE Transactions on Nuclear Science, 55, 2992-2999(2008).