Acta Optica Sinica, Volume. 44, Issue 13, 1328001(2024)
Experiment and Analysis of Proton Displacement Damage Effect of CMOS Image Sensor
Fig. 2. Relationship between average dark signal and integration time before and after proton irradiation
Fig. 4. Three-dimensional distributions of thermal pixels before and after proton radiation. (a) Before radiation; (b) 50 MeV proton fluence of 6×1010 cm-2; (c) 90 MeV proton fluence of 8.3×1010 cm-2; (d) 90 MeV proton fluence of 4.7×1011 cm-2
Fig. 5. Relationship between DSNU and integration time before and after proton irradiation
Fig. 6. Two-level RTS diagrams of CIS induced by proton irradiation. (a) Relationship between RTS and integration time; (b) two-level RTS of different pixels
Fig. 9. Influence of point defects on generation rate of space charge region. (a) Nonirradiated; (b) V3; (c) Ip
Fig. 10. Influence of defect types on the generation rate of space charge region. (a) Nonirradiated; (b) Ip; (c) Vn
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Jiecheng Yang, Qian Yin, Gang Guo, Yanwen Zhang, Li Li, Xiangli Zhong. Experiment and Analysis of Proton Displacement Damage Effect of CMOS Image Sensor[J]. Acta Optica Sinica, 2024, 44(13): 1328001
Category: Remote Sensing and Sensors
Received: Feb. 2, 2024
Accepted: Mar. 18, 2024
Published Online: Jul. 4, 2024
The Author Email: Yin Qian (yinqianqiana@163.com), Zhong Xiangli (xlzhong@xtu.edu.cn)
CSTR:32393.14.AOS240607