Acta Optica Sinica, Volume. 44, Issue 13, 1328001(2024)

Experiment and Analysis of Proton Displacement Damage Effect of CMOS Image Sensor

Jiecheng Yang1, Qian Yin2、*, Gang Guo2, Yanwen Zhang2, Li Li2, and Xiangli Zhong1、**
Author Affiliations
  • 1School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, Hunan , China
  • 2National Innovation Center of Radiation Application, China Institute of Atomic Energy, Beijing 102413, China
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    Figures & Tables(12)
    Sensor block diagram
    Relationship between average dark signal and integration time before and after proton irradiation
    Dark signal distribution after proton irradiation
    Three-dimensional distributions of thermal pixels before and after proton radiation. (a) Before radiation; (b) 50 MeV proton fluence of 6×1010 cm-2; (c) 90 MeV proton fluence of 8.3×1010 cm-2; (d) 90 MeV proton fluence of 4.7×1011 cm-2
    Relationship between DSNU and integration time before and after proton irradiation
    Two-level RTS diagrams of CIS induced by proton irradiation. (a) Relationship between RTS and integration time; (b) two-level RTS of different pixels
    Typical RTS in CIS pixels before and after proton irradiation
    CIS pixel unit model. (a) Structure diagram; (b) potential distribution
    Influence of point defects on generation rate of space charge region. (a) Nonirradiated; (b) V3; (c) Ip
    Influence of defect types on the generation rate of space charge region. (a) Nonirradiated; (b) Ip; (c) Vn
    • Table 1. Irradiation details

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      Table 1. Irradiation details

      DeviceParticleEnergy /MeVFluence /cm-2DDD /(TeV/g)
      1#Proton506.0×1010265
      Nonirradiated
      3#Proton908.3×1010265
      4#Proton902.4×1011763
      5#Proton904.7×10111495
    • Table 2. Statistics on the number of hot pixels produced before and after proton irradiation

      View table

      Table 2. Statistics on the number of hot pixels produced before and after proton irradiation

      DeviceDark signal of 0-100 DNDark signal of 100-500 DNDark signal of 500-1000 DN
      1#3909695283727883
      Nonirradiated418994543561
      3#3989507204133663
      4#35059036864481351
      5#33809258116061773
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    Jiecheng Yang, Qian Yin, Gang Guo, Yanwen Zhang, Li Li, Xiangli Zhong. Experiment and Analysis of Proton Displacement Damage Effect of CMOS Image Sensor[J]. Acta Optica Sinica, 2024, 44(13): 1328001

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    Paper Information

    Category: Remote Sensing and Sensors

    Received: Feb. 2, 2024

    Accepted: Mar. 18, 2024

    Published Online: Jul. 4, 2024

    The Author Email: Yin Qian (yinqianqiana@163.com), Zhong Xiangli (xlzhong@xtu.edu.cn)

    DOI:10.3788/AOS240607

    CSTR:32393.14.AOS240607

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