High quality strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxy

Guo-Shuai WEI; Rui-Ting HAO; Jie GUO; Xiao-Le MA; Xiao-Ming LI; Yong LI; Fa-Ran CHANG; Yu ZHUANG; Guo-Wei WANG; Ying-Qiang XU; Zhi-Chuan NIU; Yao WANG

doi:10.11972/j.issn.1001-9014.2021.05.005

Journal of Infrared and Millimeter Waves, Volume. 40, Issue 5, 595(2021)

High quality strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxy

Guo-Shuai WEI¹, Rui-Ting HAO^1、*, Jie GUO¹, Xiao-Le MA¹, Xiao-Ming LI¹, Yong LI¹, Fa-Ran CHANG¹, Yu ZHUANG¹, Guo-Wei WANG^2,3、**, Ying-Qiang XU^2,3, Zhi-Chuan NIU^2,3, and Yao WANG⁴

Author Affiliations

¹School of Energy and Environment Science，Yunnan Normal University，Kunming 650092，China

²State Key Laboratory for SLs and Microstructures，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China

³Synergetic Innovation Center of Quantum Information and Quantum Physics，University of Science and Technology of China，Hefei 230026，China

⁴National Center for International Research on Green Optoelectronics，Guangdong Provincial Key Laboratory of Optical Information Materials and Technology，Institute of Electronic Paper Displays，South China Academy of Advanced Optoelectronics，South China Normal University，Guangzhou 510006，China

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References(21)

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Guo-Shuai WEI, Rui-Ting HAO, Jie GUO, Xiao-Le MA, Xiao-Ming LI, Yong LI, Fa-Ran CHANG, Yu ZHUANG, Guo-Wei WANG, Ying-Qiang XU, Zhi-Chuan NIU, Yao WANG. High quality strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxy[J]. Journal of Infrared and Millimeter Waves, 2021, 40(5): 595

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Paper Information

Category: Research Articles

Received: Sep. 12, 2020

Accepted: --

Published Online: Sep. 29, 2021

The Author Email: Rui-Ting HAO (ruitinghao@semi.ac.cn), Guo-Wei WANG (wangguowei@semi.ac.cn)

DOI:10.11972/j.issn.1001-9014.2021.05.005

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laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology