Fig. 1. Schematic illustration of mechanical shutter sequences used in growing（a）InAs/GaSb and（b）InAs/InAsSb superlattices.

Fig. 2. The GaSb substrate surface reconstitution diffraction stripe varies with substrate temperature. (a) 2×5, (b) 1×3

Fig. 3. The mechanical shutter sequence during growth（Contains InSb interface）

Fig. 4. AFM image of spike-like defects in an area of 10µm×10µm：Tc+15°C Tc Tc-15°C Tc-25°C

Fig. 5. Trend of the number of spike-like defects with temperature in a 10µm×10µm area

Fig. 6. The high-resolution x-ray diffraction（HRXRD）of the three sets of InAs/InAsSb SLs samples with the BEP flux ratio. S1：Sb/In=3.1，S2：Sb/In=2，S3：Sb/In=1.

Fig. 7. (a) HRXRD of measurement (black) and simulations (red) of InAs/InAs_0.66Sb_0.34 SL.：（b）Structure used for HRXRD simulation before shutter sequence optimization

Fig. 8. The images of the mechanical shutter sequence of each sources cell shutter.（Uninsert InSb interface）

Fig. 9. (a) HRXRD of three sets of samples with different Sb/In: S1, Sb/In=1; S2, Sb/In=2; S3, Sb/In=3.1; (b) Variation of strain and x_sb with Sb/In in InAs/InAs_1-xSb_x superlattices.

Fig. 10. (a) HRXRD of S1 (black) and simulations (red) of InAs/InAs_0.66Sb_0.34 SL. The inset shows the separation between the GaSb substrate and SL 0th-order peak.：（b）Structure used for HRXRD simulation after shutter sequence optimization

Fig. 11. AFM images of (a)Tc-15°C, (b)Tc, (c)Tc+15°C InAs/InAs_0.66Sb_0.34 SL samples surface morphology over 10µm×10µm.

Fig. 12. The variation trend of 0th-order peak FWHM values and surface RMS roughness at different growth temperatures.

Fig. 13. The FTIR absorption spectrum of InAs/InAs_0.66Sb_0.34 superlattice.

Fig. 14. PL spectrum of the InAs/InAs_0.66Sb_0.34 SL at different temperatures.