[1] Ghosh S, Pradeep C P, Sharma S K et al. Recent advances in non-chemically amplified photoresists for next generation IC technology[J]. RSC Advances, 6, 74462-74481(2016).

[2] Reichmanis E, Thompson L F. Polymer materials for microlithography[J]. Annual Review of Materials Research, 17, 235-271(1987).

[3] Luo C Y, Xu C C, Lv L et al. Review of recent advances in inorganic photoresists[J]. RSC Advances, 10, 8385-8395(2020).

[4] Liu B R, Huang Y C, Wu Z B et al. Photoresist for laser additive manufacturing: status, challenges, and opportunities (Invited)[J]. Chinese Journal of Lasers, 51, 1202411(2024).

[5] Li L, Liu X, Pal S et al. Extreme ultraviolet resist materials for sub-7 nm patterning[J]. Chemical Society Reviews, 46, 4855-4866(2017).

[6] Manouras T, Argitis P. High sensitivity resists for EUV lithography: a review of material design strategies and performance results[J]. Nanomaterials, 10, 1593(2020).

[7] Xu H, Kosma V, Giannelis E P et al. In pursuit of Moore’s Law: polymer chemistry in action[J]. Polymer Journal, 50, 45-55(2018).

[8] Tu M, Xia B Z, Kravchenko D E et al. Direct X-ray and electron-beam lithography of halogenated zeolitic imidazolate frameworks[J]. Nature Materials, 20, 93-99(2021).

[9] Lewis S M, DeRose G A, Alty H R et al. Tuning the performance of negative tone electron beam resists for the next generation lithography[J]. Advanced Functional Materials, 32, 2202710(2022).

[10] Wagner C, Harned N. Lithography gets extreme[J]. Nature Photonics, 4, 24-26(2010).

[11] Yogesh M, Moinuddin M G, Chauhan M et al. Organoiodine functionality bearing resists for electron-beam and helium ion beam lithography: complex and sub-16 nm patterning[J]. ACS Applied Electronic Materials, 3, 1996-2004(2021).

[12] Pierrat C, Tedesco S, Vinet F et al. PRIME process for deep UV and E-beam lithography[J]. Microelectronic Engineering, 11, 507-514(1990).

[13] Tiwale N, Subramanian A, Kisslinger K et al. Advancing next generation nanolithography with infiltration synthesis of hybrid nanocomposite resists[J]. Journal of Materials Chemistry C, 7, 8803-8812(2019).

[14] Hasan R M M, Luo X C. Promising lithography techniques for next-generation logic devices[J]. Nanomanufacturing and Metrology, 1, 67-81(2018).

[15] Reichmanis E, Thompson L F. Polymer materials for microlithography[J]. Chemical Reviews, 89, 1273-1289(1989).

[16] Bratton D, Ayothi R, Deng H et al. Diazonaphthoquinone molecular glass photoresists: patterning without chemical amplification[J]. Chemistry of Materials, 19, 3780-3786(2007).

[17] Ito H, Willson C G. Chemical amplification in the design of dry developing resist materials[J]. Polymer Engineering & Science, 23, 1012-1018(1983).

[18] Ito H. Chemical amplification resists: inception, implementation in device manufacture, and new developments[J]. Journal of Polymer Science Part A: Polymer Chemistry, 41, 3863-3870(2003).

[19] Allen R D, Sooriyakumaran R, Opitz J et al. Progress in 193 nm positive resists[J]. Journal of Photopolymer Science and Technology, 9, 465-474(1996).

[20] Nozaki K. Material innovations for 193-nm resists[J]. Journal of Photopolymer Science and Technology, 23, 795-801(2010).

[21] Sanders D P. Advances in patterning materials for 193 nm immersion lithography[J]. Chemical Reviews, 110, 321-360(2010).

[22] López-Gejo J, Kunjappu J T, Zhou J et al. Polycycloalkanes as potential third-generation immersion fluids for photolithography at 193 nm[J]. Chemistry of Materials, 19, 3641-3647(2007).

[23] Rohdenburg M, Thakur N, Cartaya R et al. Role of low-energy electrons in the solubility switch of Zn-based oxocluster photoresist for extreme ultraviolet lithography[J]. Physical Chemistry Chemical Physics, 23, 16646-16657(2021).

[24] Wang X L, Tao P P, Wang Q Q et al. Trends in photoresist materials for extreme ultraviolet lithography: a review[J]. Materials Today, 67, 299-319(2023).

[25] Ito T, Okazaki S. Pushing the limits of lithography[J]. Nature, 406, 1027-1031(2000).

[26] Huck W T S. Self-assembly meets nanofabrication: recent developments in microcontact printing and dip-pen nanolithography[J]. Angewandte Chemie (International Ed. in English), 46, 2754-2757(2007).

[27] Seisyan R P. Nanolithography in microelectronics: a review[J]. Technical Physics, 56, 1061-1073(2011).

[28] Service R F. Optical lithography goes to extremes: and beyond[J]. Science, 293, 785-786(2001).

[29] Narasimhan A, Wisehart L, Grzeskowiak S et al. What we don’t know about EUV exposure mechanisms[J]. Journal of Photopolymer Science and Technology, 30, 113-120(2017).

[30] Zhang Y H, Yu H J, Wang L et al. Advanced lithography materials: from fundamentals to applications[J]. Advances in Colloid and Interface Science, 329, 103197(2024).

[31] Diulus J T, Frederick R T, Li M J et al. Ambient-pressure X-ray photoelectron spectroscopy characterization of radiation-induced chemistries of organotin clusters[J]. ACS Applied Materials & Interfaces, 11, 2526-2534(2019).

[32] Torok J, del Re R, Herbol H et al. Secondary electrons in EUV lithography[J]. Journal of Photopolymer Science and Technology, 26, 625-634(2013).

[33] Rathore A, Pollentier I, Singh H et al. Effect of molecular weight on the EUV-printability of main chain scission type polymers[J]. Journal of Materials Chemistry C, 8, 5958-5966(2020).

[34] Bespalov I, Zhang Y, Haitjema J et al. Key role of very low energy electrons in tin-based molecular resists for extreme ultraviolet nanolithography[J]. ACS Applied Materials & Interfaces, 12, 9881-9889(2020).

[35] Fallica R, Mahne N, Conard T et al. Mean free path of electrons in organic photoresists for extreme ultraviolet lithography in the kinetic energy range 20-450 eV[J]. ACS Applied Materials & Interfaces, 15, 35483-35494(2023).

[36] Brainard R L, Barclay G G, Anderson E H et al. Resists for next generation lithography[J]. Microelectronic Engineering, 61, 707-715(2002).

[37] Hassanein E, Higgins C, Naulleau P et al. Film quantum yields of EUV and ultra-high PAG photoresists[J]. Proceedings of SPIE, 6921, 69211I(2008).

[38] Wang Q Q, Vockenhuber M, Cui H et al. Theoretical insights into the solubility polarity switch of metal-organic nanoclusters for nanoscale patterning[J]. Small Methods, 7, e2300309(2023).

[39] Wang Q Q, Zhou Y T, Wang X L et al. Suppressing of secondary electron diffusion for high-precision nanofabrication[J]. Materials Today, 67, 95-105(2023).

[40] Haume K, de Vera P, Verkhovtsev A et al. Transport of secondary electrons through coatings of ion-irradiated metallic nanoparticles[J]. The European Physical Journal D, 72, 116(2018).

[41] Lin N, Chen Y Y, Wei X et al. Spectral purity systems applied for laser-produced plasma extreme ultraviolet lithography sources: a review[J]. High Power Laser Science and Engineering, 11, e64(2023).

[42] Li B, Che Y, Xu H et al. Lithography technical science knowledge map and multidimensional theme analysis[J]. Laser & Optoelectronics Progress, 60, 2300004(2023).

[43] Bhattarai S, Neureuther A R, Naulleau P P. Study of shot noise in photoresists for extreme ultraviolet lithography through comparative analysis of line edge roughness in electron beam and extreme ultraviolet lithography[J]. Journal of Vacuum Science Technology B: Microelectronics and Nanometer Structures, 35, 061602(2017).

[44] Wood O R. EUVL: challenges to manufacturing insertion[J]. Journal of Photopolymer Science and Technology, 30, 599-604(2017).

[45] Fujii S, Kozawa T, Okamoto K et al. Shot noise limit of sensitivity of chemically amplified resists used for extreme ultraviolet lithography[J]. Japanese Journal of Applied Physics, 54, 116501(2015).

[46] Diulus J T, Frederick R T, Hutchison D C et al. Effect of ambient conditions on radiation-induced chemistries of a nanocluster organotin photoresist for next-generation EUV nanolithography[J]. ACS Applied Nano Materials, 3, 2266-2277(2020).

[47] Ober C K, Käfer F, Yuan C Y. Recent developments in photoresists for extreme-ultraviolet lithography[J]. Polymer, 280, 126020(2023).

[48] Nishikubo T, Kudo H. Recent development in molecular resists for extreme ultraviolet lithography[J]. Journal of Photopolymer Science and Technology, 24, 9-18(2011).

[49] Thakur N, Bliem R, Mochi I et al. Mixed-ligand zinc-oxoclusters: efficient chemistry for high resolution nanolithography[J]. Journal of Materials Chemistry C, 8, 14499-14506(2020).

[50] Itani T, Kozawa T. Resist materials and processes for extreme ultraviolet lithography[J]. Japanese Journal of Applied Physics, 52, 010002(2013).

[51] Gao J X, Chen L, Yu J T et al. Research progress on high resolution extreme ultraviolet photoresist[J]. Chinese Journal of Applied Chemistry, 38, 1138-1153(2021).

[52] Chen H, Chen P Z, Peng X J. Metal-based extreme ultraviolet photoresist[J]. CIESC Journal, 73, 3307-3325(2022).

[53] Guo X D, Yang G Q, Li Y. Development of extreme ultraviolet photoresists[J]. Laser & Optoelectronics Progress, 59, 0922004(2022).

[54] Yuan J R, Zhang P P, Shi J B et al. Progress of photoresist materials for extreme ultraviolet lithography[J]. Polymer Bulletin, 11-25(2022).

[55] Cui H, Wang Q Q, Wang X L et al. Towards extreme ultraviolet lithography: progress and challenges of photoresists[J]. Chinese Journal of Applied Chemistry, 38, 1154-1167(2021).

[56] Reichmanis E, Houlihan F M, Nalamasu O et al. Chemical amplification mechanisms for microlithography[J]. Chemistry of Materials, 3, 394-407(1991).

[57] Lee S M, Frechet J M J. Design of new positive-tone photoresists based on the acid-catalyzed hydrolysis of phenylmethanediol diesters[J]. Chemistry of Materials, 6, 1830-1837(1994).

[58] Liu J, Wang L Y. Novel polymeric sulfonium photoacid generator and its application for chemically amplified photoresists[J]. ECS Transactions, 60, 231(2014).

[59] Fujii T, Matsumaru S, Yamada T et al. Patterning performance of chemically amplified resist in EUV lithography[J]. Proceedings of SPIE, 9776, 97760Y(2016).

[60] Carcasi M, Nagahara S, Shiraishi G et al. Simulation and experimentation of PSCAR chemistry for complex structures[J]. Proceedings of SPIE, 10143, 1014329(2017).

[61] Nagahara S, Carcasi M, Shiraishi G et al. Photosensitized Chemically Amplified Resist (PSCAR) 2.0 for high-throughput and high-resolution EUV lithography: dual photosensitization of acid generation and quencher decomposition by flood exposure[J]. Proceedings of SPIE, 10146, 101460G(2017).

[62] Torti E, Protti S, Bollanti S et al. Aryl sulfonates as initiators for extreme ultraviolet lithography: applications in epoxy-based hybrid materials[J]. ChemPhotoChem, 2, 425-432(2018).

[63] Popescu C, Vesters Y, McClelland A et al. Multi trigger resist for EUV lithography[J]. Journal of Photopolymer Science and Technology, 31, 227-232(2018).

[64] Käfer F, Wang C, Huang Y M et al. Polypeptoids: exploring the power of sequence control in a photoresist for extreme-ultraviolet lithography[J]. Advanced Materials Technologies, 8, 2301104(2023).

[65] Fu C B, Du K, Xue J et al. Mechanisms of acid generation from ionic photoacid generators for extreme ultraviolet and electron beam lithography[J]. Physical Chemistry Chemical Physics, 26, 18547-18556(2024).

[66] Satyanarayana V S V, Kessler F, Singh V et al. Radiation-sensitive novel polymeric resist materials: iterative synthesis and their EUV fragmentation studies[J]. ACS Applied Materials & Interfaces, 6, 4223-4232(2014).

[67] Deng J Y, Bailey S, Ai R W et al. Synthesis of end-cap enabled self-immolative photoresists for extreme ultraviolet lithography[J]. ACS Macro Letters, 11, 1049-1054(2022).

[68] Wang Z H, Chen J P, Yu T J et al. Sulfonium-functionalized polystyrene-based nonchemically amplified resists enabling sub-13 nm nanolithography[J]. ACS Applied Materials & Interfaces, 15, 2289-2300(2023).

[69] Wang Y K, Chen J P, Zeng Y et al. Nonchemically amplified molecular resists based on sulfonium-functionalized sulfone derivatives for sub-13 nm nanolithography[J]. ACS Applied Nano Materials, 6, 18480-18490(2023).

[70] Chen J P, Hao Q S, Wang S Q et al. Molecular glass resists based on 9, 9’‐spirobifluorene derivatives: pendant effect and comprehensive evaluation in extreme ultraviolet lithography[J]. ACS Applied Polymer Materials, 1, 526-534(2019).

[71] Wang Y K, Chen J P, Zeng Y et al. Molecular glass resists based on tetraphenylsilane derivatives: effect of protecting ratios on advanced lithography[J]. ACS Omega, 7, 29266-29273(2022).

[72] Zhang S L, Chen L, Gao J X et al. Chemically amplified molecular glass photoresist regulated by 2-aminoanthracene additive for electron beam lithography and extreme ultraviolet lithography[J]. ACS Omega, 8, 26739-26748(2023).

[73] Gao J X, Zhang S L, Cui X W et al. Optimization strategy for epoxy cross-linked molecular glass photoresist in EUV lithography[J]. Journal of Photochemistry and Photobiology A: Chemistry, 453, 115684(2024).

[74] Ekinci Y, Solak H H, Padeste C et al. 20 nm line/space patterns in HSQ fabricated by EUV interference lithography[J]. Microelectronic Engineering, 84, 700-704(2007).

[75] Desai V, Mellish M, Bennett S et al. Process development for high resolution hydrogen silsesquioxane patterning using a commercial scanner for extreme ultraviolet lithography[J]. Journal of Vacuum Science & Technology B, 35, 021603(2017).

[76] Mpatzaka T, Zisis G, Raptis I et al. Process study and the lithographic performance of commercially available silsesquioxane based electron sensitive resist Medusa 82[J]. Micro and Nano Engineering, 8, 100065(2020).

[77] Rathore A, Pollentier I, Cipriani M et al. Extreme ultraviolet-printability and mechanistic studies of engineered hydrogen silsesquioxane photoresist systems[J]. ACS Applied Polymer Materials, 3, 1964-1972(2021).

[78] Dong Y, He X M, Xu H. Review and challenges of photosensitive materials in two‑photon lithography (Invited)[J]. Chinese Journal of Lasers, 51, 1202406(2024).

[79] Fallica R, Stowers J K, Grenville A et al. Dynamic absorption coefficients of chemically amplified resists and nonchemically amplified resists at extreme ultraviolet[J]. Journal of Micro/Nanolithography, MEMS, and MOEMS, 15, 033506(2016).

[80] Passarelli J, Murphy M, del Re R et al. Organometallic carboxylate resists for extreme ultraviolet with high sensitivity[J]. Journal of Micro/Nanolithography, MEMS, and MOEMS, 14, 043503(2015).

[81] Sortland M, Hotalen J, Del Re R et al. Platinum and palladium oxalates: positive-tone extreme ultraviolet resists[J]. Journal of Micro/Nanolithography, MEMS, and MOEMS, 14, 043511(2015).

[82] Enomoto S, Yoshino T, Machida K et al. Effects of an organotin compound on radiation-induced reactions of extreme-ultraviolet resists utilizing polarity change and radical crosslinking[J]. Japanese Journal of Applied Physics, 58, 016504(2019).

[83] Peter J, Moinuddin M G, Ghosh S et al. Organotin in nonchemically amplified polymeric hybrid resist imparts better resolution with sensitivity for next-generation lithography[J]. ACS Applied Polymer Materials, 2, 1790-1799(2020).

[84] Belmonte G K, Cendron S W, Guruprasad Reddy P et al. Mechanistic insights of Sn-based non-chemically-amplified resists under EUV irradiation[J]. Applied Surface Science, 533, 146553(2020).

[85] Yang F L, Dong S A, Wang X N et al. Study on photochemical synthesis and spectral property of gold nanoparticles in glucose solution[J]. Precious Metals, 33, 10-14(2012).

[86] Stowers J K, Telecky A, Kocsis M et al. Directly patterned inorganic hardmask for EUV lithography[J]. Proceedings of SPIE, 7969, 796915(2011).

[87] Kasahara K, Xu H, Kosma V et al. Nanoparticle photoresist studies for EUV lithography[J]. Proceedings of SPIE, 10143, 1014308(2017).

[88] Mattson E C, Cabrera Y, Rupich S M et al. Chemical modification mechanisms in hybrid hafnium oxo-methacrylate nanocluster photoresists for extreme ultraviolet patterning[J]. Chemistry of Materials, 30, 6192-6206(2018).

[89] Zhang L, Fan X, Yi X F et al. Coordination-delayed-hydrolysis method for the synthesis and structural modulation of titanium-oxo clusters[J]. Accounts of Chemical Research, 55, 3150-3161(2022).

[90] Yi X F, Wang D, Li F et al. Molecular bixbyite-like In12-oxo clusters with tunable functionalization sites for lithography patterning applications[J]. Chemical Science, 12, 14414-14419(2021).

[91] Wang D, Yi X F, Zhang L. Non-alkyl tin-oxo clusters as new-type patterning materials for nanolithography[J]. Science China Chemistry, 65, 114-119(2022).

[92] Liu F F, Wang D, Chen G H et al. Alkenyl-type ligands functionalized tin-lanthanide oxo nanoclusters as molecular lithography resists[J]. Science China Chemistry, 66, 1731-1736(2023).

[93] Wang Q Q, Cui H, Wang X L et al. Exceptional light sensitivity by thiol-ene click lithography[J]. Journal of the American Chemical Society, 145, 3064-3074(2023).

[94] Si Y M, Zhou D H, Zhao J et al. Radiation chemistry of a novel zinc-oxo cluster crosslinking strategy for EUV patterning[J]. Science China Materials, 67, 1588-1593(2024).

[95] Chen H, Peng Y F, Fu H C et al. Effect of free radicals on irradiation chemistry of a double-coordination organotin (Sn4) photoresist by adjusting alkyl ligands[J]. CCS Chemistry, 1-10(2024).

[96] Qiao Y, Shi G Y, Zhang O et al. Heterometallic Ti-Zr oxo nanocluster photoresists for advanced lithography[EB/OL]. https:∥www.sciengine.com/SCMs/doi/10.1007/s40843-024-3013-9