Fig. 1. Diagrams. (a) Principle diagram of peripheral photoinhibition; (b) principle diagram of quencher molecule

Fig. 2. Surface roughness characterization under peripheral photoinhibition. (a) Scanning electron microscopy (SEM) image of the line written at the speed of 1000 μm/s, where the left part is the written line with a single Gaussian excitation laser and the right part is the written line with Gaussian excitation laser and donut-shaped depletion laser; (b) the shape of excitation and depletion laser focus in the x-z plane measured by scanning a 150 nm diameter gold bead; (c) SEM image of the flat disk written with a single Gaussian excitation laser; (d) SEM image of the flat disk written with single Gaussian excitation laser and 0-π phase mask depletion laser; (e) AFM image of the flat disk written without the 0-π phase mask depletion laser; (f) AFM image of the flat disk written with the 0-π phase mask depletion laser

Fig. 3. Surface roughness characterization under the effect of quencher. (a) Energy level diagram of photoinitiator after photoexcitation with quencher; (b) SEM image of the written line^{in DETC photoresist with single Gaussian excitation laser at 1000 μm/s; (c) SEM image of the written linein DETC+BTPOS photoresist with single Gaussian excitation laser at 1000 μm/s; (d) SEM image of the written diskin DETC photoresist; (e) SEM image of the written diskin DETC+BTPOS photoresist; (f) AFM image of the written diskin DETC+BTPOS photoresist}

Fig. 4. Surface roughness characterization under both effects. (a) SEM image of the micro-len written with a single Gaussian excitation laser in DETC photoresist; (b) SEM image of the micro-len written with single Gaussian excitation laser and 0-π phase mask depletion laser in DETC+BTPOS photoresist; (c) AFM image of the flat disk written with single Gaussian excitation laser and 0-π phase mask depletion laser in DETC+BTPOS photoresist; (d)‒(e) AFM images of the top of the micro-len