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Chinese Journal of Lasers, Volume. 47, Issue 8, 802002(2020)

Effect of Crystal Orientation on Synthesis of Graphene Layers by Laser Decomposition of 4H-SiC

Sun Zhengyang1,2, Ji Lingfei1,2、*, Lin Zhenyuan1,2, Zhang Tong1,2, Xu Yuanbo1,2, and Zhang Litian1,2
Author Affiliations
  • 1Institute of Laser Engineering, Faculty of Materials and Manufacturing, Beijing University of Technology,Beijing 100124, China
  • 2Key Laboratory of Trans-Scale Laser Manufacturing Technology of Ministry of Education, Beijing 100124, China
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    AbstractGet PDF(in Chinese)
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    References (28)
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    Schematic of experimental device

    Fig. 1. Schematic of experimental device

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    Raman spectra and spectral peak intensity ratios of 4H-SiC sample surface irradiated by different numbers of laser pulses

    Fig. 2. Raman spectra and spectral peak intensity ratios of 4H-SiC sample surface irradiated by different numbers of laser pulses

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    Raman spectra of 4H-SiC sample surface irradiated by laser with different energy densities

    Fig. 3. Raman spectra of 4H-SiC sample surface irradiated by laser with different energy densities

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    AFM morphology of Si-plane (0001) and a-plane (11?20) of SiC sample surface after 8000 pulses of laser irradiation with different energy densities. (a) Si-plane (0001), 1.0 J/cm2; (b) Si-plane (0001), 1.06 J/cm2; (c) Si-plane (0001), 1.13 J/cm2; (d) Si-plane (0001), 1.19 J/cm2; (e) a-plane (11?20), 1.0 J/cm2; (f) a-plane (11?20), 1.06 J/cm2; (g) a-plane (11?20), 1.13 J/cm2; (h) a-plane (11?20), 1.19 J/cm2

    Fig. 4. AFM morphology of Si-plane (0001) and a-plane (11?20) of SiC sample surface after 8000 pulses of laser irradiation with different energy densities. (a) Si-plane (0001), 1.0 J/cm2; (b) Si-plane (0001), 1.06 J/cm2; (c) Si-plane (0001), 1.13 J/cm2; (d) Si-plane (0001), 1.19 J/cm2; (e) a-plane (11?20), 1.0 J/cm2; (f) a-plane (11?20), 1.06 J/cm2; (g) a-plane (11?20), 1.13 J/cm2; (h) a-plane (11?20), 1.19 J/cm2

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    4H-SiC supercell model and schematics of arrangement of different crystal plane atoms. (a) Supercell ball bat model; (b) Si-plane (0001) atom arrangement diagram; (c) a-plane (11?20) atom arrangement diagram

    Fig. 5. 4H-SiC supercell model and schematics of arrangement of different crystal plane atoms. (a) Supercell ball bat model; (b) Si-plane (0001) atom arrangement diagram; (c) a-plane (11?20) atom arrangement diagram

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    Schematics of graphene growth after laser irradiating 4H-SiC sample. (a) Irradiating Si-plane (0001); (b) irradiating a-plane(11 20)

    Fig. 6. Schematics of graphene growth after laser irradiating 4H-SiC sample. (a) Irradiating Si-plane (0001); (b) irradiating a-plane(11 20)

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    High resolution transmission electron microscope (HRTEM) images of 4H-SiC after after laser irradiation (a) Irradiating Si-plane (0001) of SiC sample and the illustration is selected area enlarged view; (b) irradiating a-plane (0001) of SiC sample and the illustration is selected area enlarged view

    Fig. 7. High resolution transmission electron microscope (HRTEM) images of 4H-SiC after after laser irradiation (a) Irradiating Si-plane (0001) of SiC sample and the illustration is selected area enlarged view; (b) irradiating a-plane (0001) of SiC sample and the illustration is selected area enlarged view

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    • Table 1. Hall effect measurement for sample surface after Si-plane (0001) is irradiated by laser with different energy densities (number of pulse is 8000)

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      Table 1. Hall effect measurement for sample surface after Si-plane (0001) is irradiated by laser with different energy densities (number of pulse is 8000)

      Energy density /(J·cm-2)Resistivity /(Ω·cm-1)Surface carrier mobility /(cm2·V-1·s-1)Surface currentconcentration (n type)
      1.011.045.789.789×1016
      1.060.52341696.881×1016
      1.130.83041057.422×1016
      1.192.08421.91.368×1017

    • Table 2. Hall effect measurement for sample surface after a-plane (11?20) is irradiated by laser with different energy densities (number of pulse is 8000)

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      Table 2. Hall effect measurement for sample surface after a-plane (11?20) is irradiated by laser with different energy densities (number of pulse is 8000)

      Energy density /(J·cm-2)Resistivity /(Ω·cm-1)Surface carrier mobility /(cm2·V-1·s-1)Surface currentconcentration (n type)
      1.00.32411451.326×1017
      1.060.33293086.281×1016
      1.130.3241071.8×1017
      1.190.337363.72.695×1017
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    Sun Zhengyang, Ji Lingfei, Lin Zhenyuan, Zhang Tong, Xu Yuanbo, Zhang Litian. Effect of Crystal Orientation on Synthesis of Graphene Layers by Laser Decomposition of 4H-SiC[J]. Chinese Journal of Lasers, 2020, 47(8): 802002

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    Paper Information

    Category: laser manufacturing

    Received: Jan. 6, 2020

    Accepted: --

    Published Online: Aug. 24, 2020

    The Author Email: Lingfei Ji (ncltji@bjut.edu.cn)

    DOI:10.3788/CJL202047.0802002

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology