Effect of Crystal Orientation on Synthesis of Graphene Layers by Laser Decomposition of 4H-SiC

Sun Zhengyang; Ji Lingfei; Lin Zhenyuan; Zhang Tong; Xu Yuanbo; Zhang Litian

doi:10.3788/CJL202047.0802002

Chinese Journal of Lasers, Volume. 47, Issue 8, 802002(2020)

Effect of Crystal Orientation on Synthesis of Graphene Layers by Laser Decomposition of 4H-SiC

Sun Zhengyang^1,2, Ji Lingfei^1,2、*, Lin Zhenyuan^1,2, Zhang Tong^1,2, Xu Yuanbo^1,2, and Zhang Litian^1,2

¹Institute of Laser Engineering, Faculty of Materials and Manufacturing, Beijing University of Technology,Beijing 100124, China

²Key Laboratory of Trans-Scale Laser Manufacturing Technology of Ministry of Education, Beijing 100124, China

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Sun Zhengyang, Ji Lingfei, Lin Zhenyuan, Zhang Tong, Xu Yuanbo, Zhang Litian. Effect of Crystal Orientation on Synthesis of Graphene Layers by Laser Decomposition of 4H-SiC[J]. Chinese Journal of Lasers, 2020, 47(8): 802002

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Paper Information

Category: laser manufacturing

Received: Jan. 6, 2020

Accepted: --

Published Online: Aug. 24, 2020

The Author Email: Lingfei Ji (ncltji@bjut.edu.cn)

DOI:10.3788/CJL202047.0802002

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology