Chinese Journal of Lasers, Volume. 46, Issue 10, 1001009(2019)

Thermal Stressin High-Power Semiconductor Laser Packaging

Qinghe Yuan1,2, Hongqi Jing1、*, Li Zhong1, Suping Liu1, and Xiaoyu Ma1,2
Author Affiliations
  • 1National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors Chinese Academy of Sciences, Beijing 100083, China
  • 2College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences,Beijing 100049, China
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    References(13)

    [2] Bachmann F, Loosen P, Poprawe R. High power diode lasers: technology and applications[M]. New York: Springer, 128, 3888(2007).

    [7] Crump P, Grimshaw M, Wang J et al. 85% power conversion efficiency 975-nm broad area diode lasers at -50 ℃, 76 % at 10 ℃. [C]∥2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, May 21-26, 2006, Long Beach, CA, USA. New York: IEEE, JWB24(2016).

    [9] Yan Z D, Wang H L[M]. Thermal stress, 93-122(1993).

    [14] Liu X S, Zhao W, Xiong L L et al. Packaging of high power semiconductor lasers[M]. New York: Springer, 155-166(2015).

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    Qinghe Yuan, Hongqi Jing, Li Zhong, Suping Liu, Xiaoyu Ma. Thermal Stressin High-Power Semiconductor Laser Packaging[J]. Chinese Journal of Lasers, 2019, 46(10): 1001009

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    Paper Information

    Category: laser devices and laser physics

    Received: Apr. 19, 2019

    Accepted: May. 27, 2019

    Published Online: Oct. 25, 2019

    The Author Email: Jing Hongqi (jinghq@semi.ac.cn)

    DOI:10.3788/CJL201946.1001009

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