Chinese Journal of Lasers, Volume. 46, Issue 10, 1001009(2019)

Thermal Stressin High-Power Semiconductor Laser Packaging

Qinghe Yuan1,2, Hongqi Jing1、*, Li Zhong1, Suping Liu1, and Xiaoyu Ma1,2
Author Affiliations
  • 1National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors Chinese Academy of Sciences, Beijing 100083, China
  • 2College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences,Beijing 100049, China
  • show less
    Figures & Tables(7)
    Overall package structure of semiconductor laser bar
    Nephograms of thermal stress distribution of laser dies with different solder packages and stress distributions on central axis of end face. (a) In solder, thermal stress nephogram; (b) In solder, stress distribution on central axis of end face; (c) AuSn solder, thermal stress nephogram; (d) AuSn solder, stress distribution on central axis of end face
    Temperature distributions of lasers with different solder packages. (a) In solder; (b) AuSn solder
    Spectral distributions of lasers with different solder packages. (a) In solder; (b) AuSn solder
    Thermal stress and temperature maximum distribution of laser dies packaged by AuSn solders with different thicknesses
    Thermal stress and maximum temperature distribution of laser dies packaged by WCu submount with different thicknesses
    • Table 1. Related material parameters

      View table

      Table 1. Related material parameters

      MaterialDensity /(kg·m-3)Coefficientof thermalexpansion /K-1Thermalconductivity /(W·m-1·K-1)PoissonratioYoung'smodulus /PaHeat capacity /(J·kg-1·K-1)Meltingpoint /℃
      Cu89002.4×10-53900.371.1×1011395-
      WCu170007×10-61800.33.4×1011750-
      In73103.3×10-581.60.44981.1×1010230156.61
      AuSn147001.6×10-5570.4056.8×1010150280
      GaAs53305.8×10-6440.258×109325-
    Tools

    Get Citation

    Copy Citation Text

    Qinghe Yuan, Hongqi Jing, Li Zhong, Suping Liu, Xiaoyu Ma. Thermal Stressin High-Power Semiconductor Laser Packaging[J]. Chinese Journal of Lasers, 2019, 46(10): 1001009

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category: laser devices and laser physics

    Received: Apr. 19, 2019

    Accepted: May. 27, 2019

    Published Online: Oct. 25, 2019

    The Author Email: Jing Hongqi (jinghq@semi.ac.cn)

    DOI:10.3788/CJL201946.1001009

    Topics