Chinese Journal of Lasers, Volume. 14, Issue 10, 614(1987)
Threshold and change characteristics of photolithographical rate in laser-induced gas-phase thermochemichal photolithography
References(3)
[1] [1] D. J. Ehrlich et al.; Appl. Phys. Lett., 1981, 38, No. 12, 1018.
[2] [2] A. W. Tucker, M. Birnbaum; IEEE Electron Device Letters, 1983, EDL-4, 39.
[3] [3] S. A. Kokorowski et al.; "Proc. of the Materials Eesearoh Society Annual Meeting", Boeton, Massachesetts, 1930, Laser and Electron-Beam Solid Interactionand Materials Processing, ed. by J. F. Gibbons et al. (North-Holtod, New York, 19811. Vol. 1, p. 139.
Tools
Get Citation
Copy Citation Text
Li Ding, Qiu Mingxin, Kuang Zhong. Threshold and change characteristics of photolithographical rate in laser-induced gas-phase thermochemichal photolithography[J]. Chinese Journal of Lasers, 1987, 14(10): 614
Paper Information
Category: laser devices and laser physics
Received: Jul. 25, 1986
Accepted: --
Published Online: Aug. 10, 2012
The Author Email:
CSTR:32186.14.
© Copyright 2018-2021 | Chinese Laser Press.
All Rights Reserved 沪ICP备15018463号-20