In-Memory Computing Devices and Integrated Chips Based on Chalcogenide Phase Change Materials (Invited)

Kai Xu; Yiting Yun; Jiaxin Zhang; Xiang Li; Weiquan Wang; Maoliang Wei; Kunhao Lei; Junying Li; Hongtao Lin

doi:10.3788/AOS240949

Acta Optica Sinica, Volume. 44, Issue 15, 1513023(2024)

In-Memory Computing Devices and Integrated Chips Based on Chalcogenide Phase Change Materials (Invited)

Kai Xu¹, Yiting Yun¹, Jiaxin Zhang², Xiang Li¹, Weiquan Wang¹, Maoliang Wei¹, Kunhao Lei¹, Junying Li², and Hongtao Lin^1、*

Author Affiliations

¹College of Information Science and Electronic Engineering, The State Key Lab of Brain-Machine Intelligence, Key Laboratory of Micro-Nano Electronics and Smart System of Zhejiang Province, Zhejiang University, Hangzhou 310027, Zhejiang , China

²Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, Zhejiang , China

show less

Abstract Get PDF(in Chinese)

References(130)

[1] Owens J D, Houston M, Luebke D et al. GPU computing[J]. Proceedings of the IEEE, 96, 879-899(2008).

[2] Owens J D, Luebke D, Govindaraju N et al. A survey of general-purpose computation on graphics hardware[J]. Computer Graphics Forum, 26, 80-113(2007).

[3] Jouppi N P, Young C, Patil N et al. In-datacenter performance analysis of a tensor processing unit[C](2017).

[4] Huo Q, Yang Y M, Wang Y M et al. A computing-in-memory macro based on three-dimensional resistive random-access memory[J]. Nature Electronics, 5, 469-477(2022).

[5] Zhang H, Thompson J, Gu M L et al. Efficient on-chip training of optical neural networks using genetic algorithm[J]. ACS Photonics, 8, 1662-1672(2021).

[6] Xu S F, Wang J, Shu H W et al. Optical coherent dot-product chip for sophisticated deep learning regression[J]. Light: Science & Applications, 10, 221(2021).

[7] Liao K, Li C T, Dai T X et al. Matrix eigenvalue solver based on reconfigurable photonic neural network[J]. Nanophotonics, 11, 4089-4099(2022).

[8] Qiao L, Tang W J, Chu T. 32×32 silicon electro-optic switch with built-in monitors and balanced-status units[J]. Scientific Reports, 7, 42306(2017).

[9] Zheng D, Doménech J D, Pan W et al. Low-loss broadband 5×5 non-blocking Si3N4 optical switch matrix[J]. Optics Letters, 44, 2629-2632(2019).

[10] Chen S T, Shi Y C, He S L et al. Low-loss and broadband 2×2 silicon thermo-optic Mach-Zehnder switch with bent directional couplers[J]. Optics Letters, 41, 836-839(2016).

[11] Sun C L, Wei M L, Tang B et al. High-performance silicon PIN diode switches in the 2-µm wave band[J]. Optics Letters, 47, 2758-2761(2022).

[12] Pfeifle J, Alloatti L, Freude W et al. Silicon-organic hybrid phase shifter based on a slot waveguide with a liquid-crystal cladding[J]. Optics Express, 20, 15359-15376(2012).

[13] Edinger P, Takabayashi A Y, Errando-Herranz C et al. Silicon photonic microelectromechanical phase shifters for scalable programmable photonics[J]. Optics Letters, 46, 5671-5674(2021).

[14] Zheng J J, Khanolkar A, Xu P P et al. GST-on-silicon hybrid nanophotonic integrated circuits: a non-volatile quasi-continuously reprogrammable platform[J]. Optical Materials Express, 8, 1551-1561(2018).

[15] Reed G T, Mashanovich G, Gardes F Y et al. Silicon optical modulators[J]. Nature Photonics, 4, 518-526(2010).

[16] Harris N C, Ma Y J, Mower J et al. Efficient, compact and low loss thermo-optic phase shifter in silicon[J]. Optics Express, 22, 10487-10493(2014).

[17] Wuttig M, Yamada N. Phase-change materials for rewriteable data storage[J]. Nature Materials, 6, 824-832(2007).

[18] Feldmann J, Stegmaier M, Gruhler N et al. Calculating with light using a chip-scale all-optical abacus[J]. Nature Communications, 8, 1256(2017).

[19] Feldmann J, Youngblood N, Wright C D et al. All-optical spiking neurosynaptic networks with self-learning capabilities[J]. Nature, 569, 208-214(2019).

[20] Feldmann J, Youngblood N, Karpov M et al. Parallel convolutional processing using an integrated photonic tensor core[J]. Nature, 589, 52-58(2021).

[21] Tan J Y S, Cheng Z G, Feldmann J et al. Monadic Pavlovian associative learning in a backpropagation-free photonic network[J]. Optica, 9, 792-802(2022).

[22] Dong B W, Aggarwal S, Zhou W et al. Higher-dimensional processing using a photonic tensor core with continuous-time data[J]. Nature Photonics, 17, 1080-1088(2023).

[23] Shportko K, Kremers S, Woda M et al. Resonant bonding in crystalline phase-change materials[J]. Nature Materials, 7, 653-658(2008).

[24] Müller M J, Yadav A, Persch C et al. Tailoring crystallization kinetics of chalcogenides for photonic applications[J]. Advanced Electronic Materials, 8, 2100974(2022).

[25] Zhang Q H, Zhang Y F, Li J Y et al. Broadband nonvolatile photonic switching based on optical phase change materials: beyond the classical figure-of-merit[J]. Optics Letters, 43, 94-97(2018).

[26] Zhang Y F, Chou J B, Li J Y et al. Broadband transparent optical phase change materials for high-performance nonvolatile photonics[J]. Nature Communications, 10, 4279(2019).

[27] Wen X L, Xiong Q H. A large scale perfect absorber and optical switch based on phase change material (Ge2Sb2Te5) thin film[J]. Science China Materials, 59, 165-172(2016).

[28] Li X, Youngblood N, Ríos C et al. Fast and reliable storage using a 5 bit, nonvolatile photonic memory cell[J]. Optica, 6, 1-6(2018).

[29] Ríos C, Stegmaier M, Hosseini P et al. Integrated all-photonic non-volatile multi-level memory[J]. Nature Photonics, 9, 725-732(2015).

[30] Wei M L, Li J Y, Chen Z Q et al. Electrically programmable phase-change photonic memory for optical neural networks with nanoseconds in situ training capability[J]. Advanced Photonics, 5, 046004(2023).

[31] Cheng Z G, Ríos C, Youngblood N et al. Device-level photonic memories and logic applications using phase-change materials[J]. Advanced Materials, 30, e1802435(2018).

[32] Ríos C, Youngblood N, Cheng Z G et al. In-memory computing on a photonic platform[J]. Science Advances, 5, eaau5759(2019).

[33] Cheng Z, Ríos C, Pernice W H P et al. On-chip photonic synapse[J]. Science Advances, 3, e1700160(2017).

[34] Wu C M, Yu H S, Lee S et al. Programmable phase-change metasurfaces on waveguides for multimode photonic convolutional neural network[J]. Nature Communications, 12, 96(2021).

[35] Zheng J J, Fang Z R, Wu C M et al. Nonvolatile electrically reconfigurable integrated photonic switch enabled by a silicon PIN diode heater[J]. Advanced Materials, 32, e2001218(2020).

[36] Delaney M, Zeimpekis I, Du H et al. Nonvolatile programmable silicon photonics using an ultralow-loss Sb2Se3 phase change material[J]. Science Advances, 7, eabg3500(2021).

[37] Tian J Y, Luo H, Yang Y Q et al. Active control of anapole states by structuring the phase-change alloy Ge2Sb2Te5[J]. Nature Communications, 10, 396(2019).

[38] Ríos C, Zhang Y F, Shalaginov M Y et al. Multi-level electro-thermal switching of optical phase-change materials using graphene[J]. Advanced Photonics Research, 2, 2000034(2021).

[39] Farmakidis N, Youngblood N, Li X et al. Plasmonic nanogap enhanced phase-change devices with dual electrical-optical functionality[J]. Science Advances, 5, eaaw2687(2019).

[40] Farmakidis N, Youngblood N, Lee J S et al. Electronically reconfigurable photonic switches incorporating plasmonic structures and phase change materials[J]. Advanced Science, 9, e2200383(2022).

[41] Au Y Y, Bhaskaran H, Wright C D. Phase-change devices for simultaneous optical-electrical applications[J]. Scientific Reports, 7, 9688(2017).

[42] Rui G H, Ding C C, Gu B et al. Symmetric Ge2Sb2Te5 based metamaterial absorber induced dynamic wide-gamut structural color[J]. Journal of Optics, 22, 085003(2020).

[43] Cao T, Zhang X Y, Dong W L et al. Tuneable thermal emission using chalcogenide metasurface[J]. Advanced Optical Materials, 6, 1800169(2018).

[44] Qu Y R, Li Q, Du K K et al. Dynamic thermal emission control based on ultrathin plasmonic metamaterials including phase-changing material GST[J]. Laser & Photonics Reviews, 11, 1700091(2017).

[45] Qu Y R, Li Q, Cai L et al. Thermal camouflage based on the phase-changing material GST[J]. Light: Science & Applications, 7, 26(2018).

[46] Wei M L, Xu K, Tang B et al. Monolithic back-end-of-line integration of phase change materials into foundry-manufactured silicon photonics[J]. Nature Communications, 15, 2786(2024).

[47] Lei K H, Wei M L, Chen Z Q et al. Magnetron-sputtered and thermal-evaporated low-loss Sb-Se phase-change films in non-volatile integrated photonics[J]. Optical Materials Express, 12, 2815-2823(2022).

[48] Wuttig M, Bhaskaran H, Taubner T. Phase-change materials for non-volatile photonic applications[J]. Nature Photonics, 11, 465-476(2017).

[49] Zhang Y F, Ríos C, Shalaginov M Y et al. Myths and truths about optical phase change materials: a perspective[J]. Applied Physics Letters, 118, 210501(2021).

[50] Dong W L, Liu H L, Behera J K et al. Wide bandgap phase change material tuned visible photonics[J]. Advanced Functional Materials, 29, 1806181(2019).

[51] Fang Z R, Zheng J J, Xu P P et al. Phase change material integrated silicon photonics: GST and beyond[J]. Proceedings of SPIE, 11276, 1127602(2020).

[52] Delaney M, Zeimpekis I, Lawson D et al. A new family of ultralow loss reversible phase-change materials for photonic integrated circuits: Sb2S3 and Sb2Se3[J]. Advanced Functional Materials, 30, 2002447(2020).

[53] Meng J W, Gui Y L, Nouri B M et al. Electrical programmable multilevel nonvolatile photonic random-access memory[J]. Light: Science & Applications, 12, 189(2023).

[54] Gourvest E, Pelissier B, Vallée C et al. Impact of oxidation on Ge2Sb2Te5 and GeTe phase-change properties[J]. Journal of the Electrochemical Society, 159, H373-H377(2012).

[55] Agati M, Gay C, Benoit D et al. Effects of surface oxidation on the crystallization characteristics of Ge-rich Ge-Sb-Te alloys thin films[J]. Applied Surface Science, 518, 146227(2020).

[56] Tripathi S, Kotula P, Singh M K et al. Role of oxygen on chemical segregation in uncapped Ge2Sb2Te5 thin films on silicon nitride[J]. ECS Journal of Solid State Science and Technology, 9, 054007(2020).

[57] Ohshima N. Crystallization of germanium-antimony-tellurium amorphous thin film sandwiched between various dielectric protective films[J]. Journal of Applied Physics, 79, 8357-8363(1996).

[58] Meldrum F C, O’Shaughnessy C. Crystallization in confinement[J]. Advanced Materials, 32, e2001068(2020).

[59] Pandian R, Kooi B J, de Hosson J T M et al. Influence of capping layers on the crystallization of doped SbxTe fast-growth phase-change films[J]. Journal of Applied Physics, 100, 123511(2006).

[60] Wu C M, Yu H S, Li H et al. Low-loss integrated photonic switch using subwavelength patterned phase change material[J]. ACS Photonics, 6, 87-92(2019).

[61] Li J Y, Huang Y Z, Song Y et al. High-performance graphene-integrated thermo-optic switch: design and experimental validation[J]. Optical Materials Express, 10, 387-396(2020).

[62] Zhang H Y, Zhou L J, Lu L J et al. Miniature multilevel optical memristive switch using phase change material[J]. ACS Photonics, 6, 2205-2212(2019).

[63] Chen C F, Schrott A, Lee M H et al. Endurance improvement of Ge2Sb2Te5-based phase change memory[C](2009).

[64] Park J B, Park G S, Baik H S et al. Phase-change behavior of stoichiometric Ge2Sb2Te5 in phase-change random access memory[J]. Journal of the Electrochemical Society, 154, H139(2007).

[65] Huang Y H, Hsieh T E. A study of electromigration behaviors of Ge2Sb2Te5 chalcogenide nano-strips subjected to pulse bias[J]. Journal of Physics D: Applied Physics, 50, 275301(2017).

[66] Crespi L, Lacaita A, Boniardi M et al. Modeling of atomic migration phenomena in phase change memory devices[C](2015).

[67] Park Y J, Yang T Y, Cho J Y et al. Electrical current-induced gradual failure of crystalline Ge2Sb2Te5 for phase-change memory[J]. Applied Physics Letters, 103, 073503(2013).

[68] Yeoh P, Ma Y Z, Cullen D A et al. Thermal-gradient-driven elemental segregation in Ge2Sb2Te5 phase change memory cells[J]. Applied Physics Letters, 114, 163507(2019).

[69] Novielli G, Ghetti A, Varesi E et al. Atomic migration in phase change materials[C], 22.3.1-22.3.4(2013).

[70] Yang T Y, Cho J Y, Park Y J et al. Driving forces for elemental demixing of GeSbTe in phase-change memory: computational study to design a durable device[J]. Current Applied Physics, 13, 1426-1432(2013).

[71] Thompson C V. Solid-state dewetting of thin films[J]. Annual Review of Materials Research, 42, 399-434(2012).

[72] Martin-Monier L, Popescu C C, Ranno L et al. Endurance of chalcogenide optical phase change materials: a review[J]. Optical Materials Express, 12, 2145-2167(2022).

[73] Lee C Y, Lian C Y, Sun H Y et al. Spatial and temporal control of glassy-crystalline domains in optical phase change materials[J]. Journal of the American Ceramic Society, 107, 1543-1556(2024).

[74] Chen W Y, Liu S Y, Zhu J L. Pixelated non-volatile programmable photonic integrated circuits with 20-level intermediate states[J]. International Journal of Extreme Manufacturing, 6, 035501(2024).

[75] Wu D, Yang X, Wang N N et al. Resonant multilevel optical switching with phase change material GST[J]. Nanophotonics, 11, 3437-3446(2022).

[76] Yang X, Lu L J, Li Y et al. Non-volatile optical switch element enabled by low-loss phase change material[J]. Advanced Functional Materials, 33, 2304601(2023).

[77] Ríos C, Du Q Y, Zhang Y F et al. Ultra-compact nonvolatile phase shifter based on electrically reprogrammable transparent phase change materials[J]. PhotoniX, 3, 26(2022).

[78] Ranno L, Sia J X B, Dao K P et al. Multi-material heterogeneous integration on a 3-D photonic-CMOS platform[J]. Optical Materials Express, 13, 2711-2725(2023).

[79] Du J, Mu Z J, Li L et al. A Raman study on nanosecond-laser-induced multi-level switching of Ge2Sb2Te5 thin films[J]. Optics & Laser Technology, 144, 107393(2021).

[80] Li W F, Cao X Y, Song S N et al. Ultracompact high-extinction-ratio nonvolatile on-chip switches based on structured phase change materials[J]. Laser & Photonics Reviews, 16, 2100717(2022).

[81] Ikuma Y, Saiki T, Tsuda H. Proposal of a small self-holding 2×2 optical switch using phase-change material[J]. IEICE Electronics Express, 5, 442-445(2008).

[82] Stegmaier M, Ríos C, Bhaskaran H et al. Nonvolatile all-optical 1×2 switch for chipscale photonic networks[J]. Advanced Optical Materials, 5, 1600346(2017).

[83] von Keitz J, Feldmann J, Gruhler N et al. Reconfigurable nanophotonic cavities with nonvolatile response[J]. ACS Photonics, 5, 4644-4649(2018).

[84] Feldmann J, Youngblood N, Li X et al. Integrated 256 cell photonic phase-change memory with 512-bit capacity[J]. IEEE Journal of Selected Topics in Quantum Electronics, 26, 8301807(2020).

[85] Aggarwal S, Milne T, Farmakidis N et al. Antimony as a programmable element in integrated nanophotonics[J]. Nano Letters, 22, 3532-3538(2022).

[86] Youngblood N, Ríos C, Gemo E et al. Tunable volatility of Ge2Sb2Te5 in integrated photonics[J]. Advanced Functional Materials, 29, 1807571(2019).

[87] Brückerhoff-Plückelmann F, Bente I, Becker M et al. Event-driven adaptive optical neural network[J]. Science Advances, 9, eadi9127(2023).

[88] Rao F, Ding K Y, Zhou Y X et al. Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing[J]. Science, 358, 1423-1427(2017).

[89] Chen X Z, Xue Y, Sun Y B et al. Neuromorphic photonic memory devices using ultrafast, non-volatile phase-change materials[J]. Advanced Materials, 35, e2203909(2023).

[90] Lu L, Reniers S F G, Wang Y Z et al. Reconfigurable InP waveguide components using the Sb2S3 phase change material[J]. Journal of Optics, 24, 094001(2022).

[91] Rudé M, Pello J, Simpson R E et al. Optical switching at 1.55 μm in silicon racetrack resonators using phase change materials[J]. Applied Physics Letters, 103, 141119(2013).

[92] Wang Q, Rogers E T F, Gholipour B et al. Optically reconfigurable metasurfaces and photonic devices based on phase change materials[J]. Nature Photonics, 10, 60-65(2016).

[93] Liu H L, Dong W L, Wang H et al. Rewritable color nanoprints in antimony trisulfide films[J]. Science Advances, 6, eabb7171(2020).

[94] Wu C M, Deng H Q, Huang Y S et al. Freeform direct-write and rewritable photonic integrated circuits in phase-change thin films[J]. Science Advances, 10, eadk1361(2024).

[95] Kato K, Kuwahara M, Kawashima H et al. Current-driven phase-change optical gate switch using indium-tin-oxide heater[J]. Applied Physics Express, 10, 072201(2017).

[96] Zhang H Y, Zhou L J, Xu J et al. Nonvolatile waveguide transmission tuning with electrically-driven ultra-small GST phase-change material[J]. Science Bulletin, 64, 782-789(2019).

[97] Fang Z R, Zheng J J, Saxena A et al. Non-volatile reconfigurable integrated photonics enabled by broadband low-loss phase change material[J]. Advanced Optical Materials, 9, 2002049(2021).

[98] Taghinejad H, Abdollahramezani S, Eftekhar A A et al. ITO-based microheaters for reversible multi-stage switching of phase-change materials: towards miniaturized beyond-binary reconfigurable integrated photonics[J]. Optics Express, 29, 20449-20462(2021).

[99] Ali U E, Modi G, Agarwal R et al. Real-time nanomechanical property modulation as a framework for tunable NEMS[J]. Nature Communications, 13, 1464(2022).

[100] Chen R, Fang Z R, Fröch J E et al. Broadband nonvolatile electrically controlled programmable units in silicon photonics[J]. ACS Photonics, 9, 2142-2150(2022).

[101] Fang Z R, Chen R, Zheng J J et al. Ultra-low-energy programmable non-volatile silicon photonics based on phase-change materials with graphene heaters[J]. Nature Nanotechnology, 17, 842-848(2022).

[102] Chen R, Fang Z R, Perez C et al. Non-volatile electrically programmable integrated photonics with a 5-bit operation[J]. Nature Communications, 14, 3465(2023).

[103] Fang Z R, Mills B, Chen R et al. Arbitrary programming of racetrack resonators using low-loss phase-change material Sb2Se3[J]. Nano Letters, 24, 97-103(2024).

[104] Zhang C P, Wei M L, Zheng J et al. Nonvolatile multilevel switching of silicon photonic devices with In2O3/GST segmented structures[J]. Advanced Optical Materials, 11, 2202748(2023).

[105] Zhou W, Dong B W, Farmakidis N et al. In-memory photonic dot-product engine with electrically programmable weight banks[J]. Nature Communications, 14, 2887(2023).

[106] Xia J, Wang T C, Wang Z X et al. Seven bit nonvolatile electrically programmable photonics based on phase-change materials for image recognition[J]. ACS Photonics, 11, 723-730(2024).

[107] Xia J, Wang Z X, Yang R et al. Ultrahigh endurance and extinction ratio in programmable silicon photonics based on a phase change material with ITO heater[J]. Laser & Photonics Reviews, 18, 2300722(2024).

[108] Jin Y H, Park B J, Kim M K. Extreme field enhancement in nano-gap plasmonic cavity via 90% efficient coupling with silicon waveguide[J]. Optics Express, 24, 25540-25547(2016).

[109] Zhang X, Shi G S, Leveillee J A et al. Ab initio theory of free-carrier absorption in semiconductors[J]. Physical Review B, 106, 205203(2022).

[110] Bai B W, Yang Q P, Shu H W et al. Microcomb-based integrated photonic processing unit[J]. Nature Communications, 14, 66(2023).

[111] Zhang H, Gu M, Jiang X D et al. An optical neural chip for implementing complex-valued neural network[J]. Nature Communications, 12, 457(2021).

[112] Ashtiani F, Geers A J, Aflatouni F. An on-chip photonic deep neural network for image classification[J]. Nature, 606, 501-506(2022).

[113] Zhong C Y, Liao K, Dai T X et al. Graphene/silicon heterojunction for reconfigurable phase-relevant activation function in coherent optical neural networks[J]. Nature Communications, 14, 6939(2023).

[114] Xu Z F, Tang B S, Zhang X Y et al. Reconfigurable nonlinear photonic activation function for photonic neural network based on non-volatile opto-resistive RAM switch[J]. Light: Science & Applications, 11, 288(2022).

[115] Shen Y C, Harris N C, Skirlo S et al. Deep learning with coherent nanophotonic circuits[J]. Nature Photonics, 11, 441-446(2017).

[116] Miscuglio M, Sorger V J. Photonic tensor cores for machine learning[J]. Applied Physics Reviews, 7, 031404(2020).

[117] Zhong C Y, Ma H, Sun C L et al. Fast thermo-optical modulators with doped-silicon heaters operating at 2 μm[J]. Optics Express, 29, 23508-23516(2021).

[118] Bandyopadhyay S, Hamerly R, Englund D. Hardware error correction for programmable photonics[J]. Optica, 8, 1247-1255(2021).

[119] Pérez-López D, López A, DasMahapatra P et al. Multipurpose self-configuration of programmable photonic circuits[J]. Nature Communications, 11, 6359(2020).

[120] Tait A N, Nahmias M A, Shastri B J et al. Broadcast and weight: an integrated network for scalable photonic spike processing[J]. Journal of Lightwave Technology, 32, 4029-4041(2014).

[121] Ghazi Sarwat S, Brückerhoff-Plückelmann F, Carrillo S G C et al. An integrated photonics engine for unsupervised correlation detection[J]. Science Advances, 8, eabn3243(2022).

[122] Aggarwal S, Dong B W, Feldmann J et al. Reduced rank photonic computing accelerator[J]. Optica, 10, 1074-1080(2023).

[123] Ye J C, Shen C, Peserico N et al. Reconfigurable application-specific photonic integrated circuit for solving partial differential equations[J]. Nanophotonics, 13, 2231-2239(2024).

[124] Qi C R, Su H, Mo K C et al. PointNet: deep learning on point sets for 3D classification and segmentation[EB/OL]. http:∥arxiv.org/abs/1612.00593v2

[125] Redmon J, Divvala S, Girshick R et al. You only look once: unified, real-time object detection[EB/OL]. http:∥arxiv.org/abs/1506.02640v5

[126] Radford A, Wu J, Child R et al. Language models are unsupervised multitask learners[EB/OL]. https:∥d4mucfpksywv.cloudfront.net/better-language-models/language-models.pdf

[127] Sutskever I, Vinyals O, Le Q V. Sequence to sequence learning with neural networks[C], 3104-3112(2014).

[128] Huang R, Zhang S, Li T Y et al. Beyond face rotation: global and local perception GAN for photorealistic and identity preserving frontal view synthesis[EB/OL]. http:∥arxiv.org/abs/1704.04086v2

[129] Srivastava N, Mansimov E, Salakhutdinov R. Unsupervised learning of video representations using LSTMs[C], 843-852(2015).

[130] Zhang J T, Wang Z, Verma N. In-memory computation of a machine-learning classifier in a standard 6T SRAM array[J]. IEEE Journal of Solid-State Circuits, 52, 915-924(2017).

Tools

Get Citation

Copy Citation Text

Kai Xu, Yiting Yun, Jiaxin Zhang, Xiang Li, Weiquan Wang, Maoliang Wei, Kunhao Lei, Junying Li, Hongtao Lin. In-Memory Computing Devices and Integrated Chips Based on Chalcogenide Phase Change Materials (Invited)[J]. Acta Optica Sinica, 2024, 44(15): 1513023

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Category: Integrated Optics

Received: Apr. 30, 2024

Accepted: Jun. 20, 2024

Published Online: Aug. 5, 2024

The Author Email: Lin Hongtao (hometown@zju.edu.cn)

DOI:10.3788/AOS240949

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology