[2] Fujisawa T, Kanazawa S, Nunoya N et al. 4×25-Gbit/s,1.3-μm, monolithically integrated light source for 100-Gbit/s Ethernet. [C]∥36th European Conference and Exhibition on Optical Communication, September 19-23, 2010, Torino, Italy. New York: IEEE, 1-6(2010).

[3] Matsui Y, Schatz R, Carey G et al. Direct modulation laser technology toward 50-GHz bandwidth. [C]∥2016 International Semiconductor Laser Conference (ISLC), September 12-15, 2016, Kobe, Japan. New York: IEEE, 1-2(2016).

[4] Kobayashi W, Fujisawa T, Ito T et al. Advantages of EADFB laser for 25 Gbaud/s 4-PAM (50 Gbit/s) modulation and 10 km single-mode fibre transmission[J]. Electronics Letters, 50, 683-685(2014).

[5] Coldren L A, Nicholes S C, Johansson L et al. High performance InP-based photonic ICs: a tutorial[J]. Journal of Lightwave Technology, 29, 554-570(2011).

[6] Kanazawa S, Fujisawa T, Ohki A et al. A compact EADFB laser array module for a future 100-Gb/s Ethernet transceiver[J]. IEEE Journal of Selected Topics in Quantum Electronics, 17, 1191-1197(2011).

[7] Ramdane A, Devaux F, Souli N et al. Monolithic integration of multiple-quantum-well lasers and modulators for high-speed transmission[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2, 326-335(1996).

[8] Luo Y, Xiong B, Wang J et al. 40 GHz AlGaInAs multiple-quantum-well integrated electroabsorption modulator/distributed feedback laser based on identical epitaxial layer scheme[J]. Japanese Journal of Applied Physics, 45, L1071-L1073(2006).

[9] Baier M, Grote N, Moehrle M et al. Integrated transmitter devices on InP exploiting electro-absorption modulation[J]. PhotoniX, 1, 4(2020).

[10] Shindo T, Kobayashi W, Fujiwara N et al. High modulated output power over 9.0 dBm with 1570-nm wavelength SOA assisted extended reach EADFB laser (AXEL)[J]. IEEE Journal of Selected Topics in Quantum Electronics, 23, 1500607(2017).

[11] Kanazawa S, Nakanishi Y, Tsunashima S et al. Equalizer-free transmission of 100-Gb/s 4-PAM signal generated by flip-chip interconnection EADFB laser module[J]. Journal of Lightwave Technology, 35, 775-780(2017).

[12] Kanazawa S, Fujisawa T, Ishii H et al. High-speed (400 Gb/s) eight-channel EADFB laser array module using flip-chip interconnection technique[J]. IEEE Journal of Selected Topics in Quantum Electronics, 21, 183-188(2015).

[13] Klein H, Przyrembel G, Sigmund A et al. 56 gbit/s InGaAlAs-MQW 1300 nm electroabsorption-modulated DFB-lasers with impedance matching circuit. [C]∥39th European Conference and Exhibition on Optical Communication (ECOC 2013), September 22-26, 2013, London: Institution of Engineering and Technology, 696-698(2013).

[14] Theurer M, Zhang H Y, Wang Y et al. 2×56 Gb/s from a double side electroabsorption modulated DFB laser and application in novel optical PAM4 generation[J]. Journal of Lightwave Technology, 35, 706-710(2017).

[15] Theurer M, Moehrle M, Troppenz U et al. 4×56 Gb/s high output power electroabsorption modulated laser array with up to 7 km fiber transmission in L-band[J]. Journal of Lightwave Technology, 36, 181-186(2018).

[16] Sun C Z, Xiong B, Luo Y et al. Investigation of external optical feedback resistance of IC-DFB and GC-DFB lasers using a very simple experimental set-up[J]. Chinese Physics Letters, 20, 1061-1063(2003).

[17] Sun C Z, Wen G P, Xiong B et al. Optimal wavelength detuning for electroabsorption modulator integrated distributed feedback lasers based on identical epitaxial layer approach. [C]∥Integrated Photonics Research, July 12, 2000, Québec City. Washington, DC: OSA, IThI2(2000).

[18] Sun C Z, Xiong B, Wang J et al. Influence of residual facet reflection on the eye-diagram performance of high-speed electroabsorption modulated lasers[J]. Journal of Lightwave Technology, 27, 2970-2976(2009).

[19] Sun C Z, Xiong B, Wang J et al. Fabrication and packaging of 40-Gb/s AlGaInAs multiple-quantum-well electroabsorption modulated lasers based on identical epitaxial layer scheme[J]. Journal of Lightwave Technology, 26, 1464-1471(2008).

[20] Sun C Z, Xiong B, Xu J M et al. 40 Gb/s AlGaInAs electroabsorption modulated laser module with novel packaging design. [C]∥22nd IEEE International Semiconductor Laser Conference, September 26-30, 2010, Kyoto, Japan. New York: IEEE, 121-122(2010).

[21] Yang S H, Sun C Z, Xiong B et al. Gain-coupled 4×25 Gb/s EML array based on an identical epitaxial layer integration scheme[J]. IEEE Journal of Selected Topics in Quantum Electronics, 25, 1500806(2019).

[22] Zhao H W, Pinna S, Sang F Q et al. High-power indium phosphide photonic integrated circuits[J]. IEEE Journal of Selected Topics in Quantum Electronics, 25, 4500410(2019).

[23] Liang S, Lu D, Zhao L J et al. Fabrication of InP-based monolithically integrated laser transmitters[J]. Science China Information Sciences, 61, 080405(2018).