Fig. 1. Schematic diagrams of (a) the typical PeLED device structure, where CTL - charge transfer layer, QD - quantum dots and (b) our PeLEC device structure, where SWCNT - single-walled carbon nanotubes.

Fig. 2. (a) Dual-function device processing scheme. (b) Device cross-section 3D illustration and SEM images, scale bars - 200 nm. (c) Final device photos: left panel- without applied bias, right panel- with applied positive bias to one of the pixels, scale bars - 5 mm.

Fig. 3. Composite perovskite PeLEC key figures-of-merit. (a) The device EL spectra on applied bias offset relative to each other, inset – CIE 1931 RGB color space with triangular NTSC color-gamut standard, “star” marker - the device’s color coordinates. (b) Measured device’s J-V curve plot in one axis with L-V curve. (c, d) The device’s band diagram at 0 V bias (left panel) and 4 V bias (right panel), where E_c and E_v are the perovskite material conduction band bottom and valence band top, respectively, E_Fn and E_Fp– quasi-Fermi levels for electrons and holes, respectively. (e) The device’s EL efficiency curve and PeLEC EQE characteristic on applied voltage. (f) The device’s power efficiency curve.

Fig. 4. (a) The PeLEC J-V curves at positive applied bias for charge carrier lifetimes: τ = 10 ns (left panel) and τ = 120 ns (right panel). (b) The PeLECs IQE at different charge carriers’ lifetimes versus applied bias. (c) Combined IQE curve versus charge carrier lifetime at 4 V.

Fig. 5. (a) Left panel – PeLECs J and L tracking over 8 minutes at 3.7 V, right panel – zoomed in maximum current density point in the J curve. (b) Comparison of the J-V curves before and after soaking. (c) Schematic simplified PeLEC’ energy level diagram combined with underlying ionic movement scenario.

Fig. 6. The dual-function PeLEC devices indicator display images. (a) The entire indicator displays frame PCB and addressing pixels PCB (left panel) with zoomed-in image of the mounted onto the indicator display frame devices (right panel). (b) Day-light indicator display image. (c) Low ambient light all-pixels-in-operation indicator display image. (d-m) Numbers from 0 to 9 images displayed with our indicator display. Scale bars in all images – 1 cm.

Fig. 7. Optical images of our n⁺⁺-Si(100)/CsPbBr₃:PEO:LiTFSI/SWCNT mat devices in shape of. (a) Alferov University (Saint-Petersburg, Russia) emblem. (b) ITMO University (Saint-Petersburg, Russia) emblem. (c) Inverted composite perovskite cat. Scale bars in all images are 500 μm.

Fig. 8. Composite perovskite photodiode key figures-of-merit. (a) J-V curves at different laser incident radiant power densities, insert – U_ch values on incident radiant power density. (b) Photodetector EQE on the electrical bias, insert – the device’s EQE at U = 0 V in linear axis. (c) Schematic simplified PeLEC’ energy level diagram in light-detecting operation regime. (d) The device’s responsivity for different laser incident radiant power densities, insert – zoomed-in section of the graph from U = 0 V to U_ch . (e) The device’s LDR curves for three different biases, insert – LDR region for three biases in linear axis. (f) The device’s specific detectivity curves for different laser incident radiant power densities, insert – zoomed-in section of the graph for maximal D* in linear axis.