[1] [1] Elsaesser T, Shah J, Rota L et al.. Initial thermalization of photoexited carriers in GaAs studied by femtosecond luminscence spectroscopy. Phys. Rev. Lett., 1991,66(13):1757～1760

[2] [2] Becker P C, Fragnito H L, Brito Cruz C H et al.. Femtosecond photon echoes from band-to-band transitions in GaAs. Phys. Rev. Lett., 1988,61(14):1647～1649

[4] [4] Worsley R E, Traynor N J, Grevatt T et al.. Transient linear birefringence in GaAs quantum wells: Magnetic field dependence of coherent exciton spin dynamics. Phys. Rev. Lett., 1996,76(17):3224～3227

[5] [5] Planken P C M, van Son P C, Hovenier J N et al.. Far-infrared picosecond time-resolved measurement of the free-induction decay in GaAs: Si. Phys. Rev. (B), 1995, 51(15):9643～9647

[6] [6] Whettet B S, Smirl A L, Boggess T F. Theory of degenerate four-wave mixing in picosecond exitation-probe experiments. IEEE J. Quant. Electron., 1983,QE-19(4):680～690

[8] [8] Oudar J L, Hulin D, Migus A et al.. Subpicosecond spectral hole burning due to nonthermalized photoexcited carriers in GaAs. Phys. Rev. Lett., 1985,55(19):2074～2077