Journal of Inorganic Materials, Volume. 40, Issue 1, 91(2025)
High Quality GaN Epitaxy Induced Nucleation by Ar Ion Implantation into Sapphire Substrate
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Table 1. Comparison of the results of different methods to improve the crystal quality of GaN thin film
View tableView in ArticleTable 1. Comparison of the results of different methods to improve the crystal quality of GaN thin film
Method FWHM(002)/(102)/arcsec Total dislocation density/(×108, cm-2) Ref. Sputtered AlN NL 201/225 3.50 [ 21 ]Al/Ti metal mask by ELOG 341/350 8.80 [ 22 ]AlN NL by MBE 300/400 10.30 [ 23 ]Al-ion implantation pretreatment on sapphire substrates 204/187 2.69 [ 17 ]Ar-ion implantation pretreatment on sapphire substrates 161.9/191.7 2.47 This work
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Xia AN, Shengrui XU, Hongchang TAO, Huake SU, He YANG, Kang XU, Lei XIE, Jingyu JIA, Jincheng ZHANG, Yue HAO. High Quality GaN Epitaxy Induced Nucleation by Ar Ion Implantation into Sapphire Substrate[J]. Journal of Inorganic Materials, 2025, 40(1): 91
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Received: Jun. 12, 2024
Accepted: --
Published Online: Apr. 24, 2025
The Author Email: Xia AN (2382744815@qq.com)
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