Microelectronics, Volume. 52, Issue 3, 478(2022)

A Measurement Method for Gate Charge Characteristics of MOSFET Under High Power Condition

WANG Yanping, RONG Yu, CHEN Leilei, LI Jinxiao, FENG Huiwei, and YAN Dawei
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    References(4)

    [1] [1] LORENZ L. Power semiconductor devices and smart power IC’s-the enabling technology for future high efficient power conversion systems [C]// IEEE 6th IPEMC. Wuhan, China. 2009: 193-201.

    [2] [2] MANTOOTH H A, PENG K, SANTI E, et al. Modeling of wide bandgap power semiconductor devices-part I [J]. IEEE Trans Elec Dev, 2015, 62(2): 423-433.

    [6] [6] ESCUDERO M, KUTSCHAK M, FONTANA N, et al. Non-linear capacitance of Si SJ MOSFETs in resonant zero voltage switching applications [J]. IEEE Access, 2020, 59(8): 116117-116131.

    [10] [10] DONG Z Z, WU X K, XU H Y, et al. Accurate analytical switching-on loss model of SiC MOSFET considering dynamic transfer characteristic and Qgd [J]. IEEE Trans Power Elec, 2020, 35(11): 12264-12273.

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    WANG Yanping, RONG Yu, CHEN Leilei, LI Jinxiao, FENG Huiwei, YAN Dawei. A Measurement Method for Gate Charge Characteristics of MOSFET Under High Power Condition[J]. Microelectronics, 2022, 52(3): 478

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    Paper Information

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    Received: Sep. 10, 2021

    Accepted: --

    Published Online: Jan. 18, 2023

    The Author Email:

    DOI:10.13911/j.cnki.1004-3365.210327

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