NUCLEAR TECHNIQUES, Volume. 46, Issue 9, 090001(2023)

Research progress on SiC irradiation temperature monitors for reactors

Xinyu LIU1, Limin ZHANG2、*, Guangsheng NING3, Weihua ZHONG3, Shenghong WANG2, and Anping HE1
Author Affiliations
  • 1School of Information Science and Engineering, Lanzhou University, Lanzhou 730000, China
  • 2School of Nuclear Science and Technology, Lanzhou University, Lanzhou 730000, China
  • 3Reactor Engineering Technology Research Institute, China Institute of Atomic Energy, Beijing 102413, China
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    References(31)

    [3] YIN Tong, HUANG Chen. The technical analysis of SiC temperature monitor used in fast reactors[C], 313-318(2015).

    [9] Thorne R P, Howard V C, Hope B. Radiation-induced changes in porous cubic silicon carbide[J]. Proceedings of the British Ceramic Society, 7, 449-459(1967).

    [13] Davis K L, Chase B, Unruh T et al. Use of silicon carbide monitors in ATR irradiation testing[C](2012).

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    Xinyu LIU, Limin ZHANG, Guangsheng NING, Weihua ZHONG, Shenghong WANG, Anping HE. Research progress on SiC irradiation temperature monitors for reactors[J]. NUCLEAR TECHNIQUES, 2023, 46(9): 090001

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    Paper Information

    Category: Research Articles

    Received: Aug. 8, 2023

    Accepted: --

    Published Online: Oct. 8, 2023

    The Author Email:

    DOI:10.11889/j.0253-3219.2023.hjs.46.090001

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