NUCLEAR TECHNIQUES, Volume. 46, Issue 9, 090001(2023)

Research progress on SiC irradiation temperature monitors for reactors

Xinyu LIU1, Limin ZHANG2、*, Guangsheng NING3, Weihua ZHONG3, Shenghong WANG2, and Anping HE1
Author Affiliations
  • 1School of Information Science and Engineering, Lanzhou University, Lanzhou 730000, China
  • 2School of Nuclear Science and Technology, Lanzhou University, Lanzhou 730000, China
  • 3Reactor Engineering Technology Research Institute, China Institute of Atomic Energy, Beijing 102413, China
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    Figures & Tables(6)
    SiC monitors machined in match-stick form developed at CIAE
    Schematic diagram of irradiation capsule containing a SiC monitor and thermocouple
    Diagram of SiC monitor electrical resistivity measurement
    XPS spectra of Si 2p core levels taken from the pristine and thermal-annealed SiCs before (a)and after (b) bathing in HF acid. The thermal-annealed SiC sample was pre-irradiated with neutrons to 0.02 DPA, the annealing temperature was 685 ℃
    • Table 1. Characteristics and accuracy for different SiC monitor measurement methods

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      Table 1. Characteristics and accuracy for different SiC monitor measurement methods

      方法

      Methods

      主要特点

      Characteristics

      测温精度

      Accuracy

      宏观尺寸法

      Macro-size

      method

      使用CVD法制备的全致密SiC;测温精度随温度升高而降低

      Using full-density CVD-SiC; measurement accuracy decreases with increasing temperature

      ±(20~30)℃[23]

      质量密度法

      Specific density

      method

      不受监控器尺寸和形状限制;耗时长、成本高

      Arbitrary size and shape of monitors; time consuming and high cost

      ± 30 ℃[1]

      热导率法

      Thermal diffusivity

      method

      有商用测试装置;监控器尺寸小,可用于温度梯度区域的测温分析

      Using commerically available thermal diffusivity systems; analysis of temperature gradients due to small size of monitors

      ± 40 ℃[1]

      晶格肿胀法

      Lattice swelling

      method

      在较低中子剂量(<10 DPA)下[24],与宏观尺寸法具有等效性,但测试方法更为简便,测温精度高

      Identical to macro-size method with neutron doses <10 DPA[24]; ease of application and high accuracy

      ± 20 ℃[14]

      电阻率法

      Electrical resistivity

      method

      测试方法简便,测温精度高,可用于低中子剂量下的温度测量

      Ease of application and high accuracy; measuring temperatures at low neutron doses

      ≤ 20 ℃[2]
    • Table 2. SiC monitor temperature measurement results

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      Table 2. SiC monitor temperature measurement results

      中子剂量

      (E>0.1 MeV) Neutron dose

      热电偶

      Thermocouple

      SiC电阻法

      Resistivity method of SiC

      SiC晶格肿胀法

      Lattice swelling method of SiC

      0.02 DPA(550±20) ℃615 ℃
      0.32 DPA(275±20) ℃~400 ℃(408±5) ℃ *
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    Xinyu LIU, Limin ZHANG, Guangsheng NING, Weihua ZHONG, Shenghong WANG, Anping HE. Research progress on SiC irradiation temperature monitors for reactors[J]. NUCLEAR TECHNIQUES, 2023, 46(9): 090001

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    Paper Information

    Category: Research Articles

    Received: Aug. 8, 2023

    Accepted: --

    Published Online: Oct. 8, 2023

    The Author Email:

    DOI:10.11889/j.0253-3219.2023.hjs.46.090001

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