Chinese Journal of Lasers, Volume. 49, Issue 11, 1101002(2022)

Strain-Compensated Multiquantum Well Structure Semiconductor Saturable Absorber Mirror

Nan Lin1,2, Li Zhong1,2、*, Haiming Li3, Xiaoyu Ma1,2, Cong Xiong1, Suping Liu1, and Zhigang Zhang4
Author Affiliations
  • 1National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China
  • 2College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3Guangdong Huakuai Photonics Technology Co., Ltd., Zhongshan 528436, Guangdong, China
  • 4School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China
  • show less
    References(21)

    [1] Wang Y G, Ma X Y, Zhang Z G. Development about the research of semiconductor saturable absorption mirror[J]. Chinese Journal of Lasers, 31, 137-139(2004).

    [2] Jacobovitz-Veselka G R, Kellerm U, Asom T. Broadband fast semiconductor saturable absorber[J]. Optics Letters, 17, 1791-1793(1992).

    [3] Keller U, Chiu T H. Resonant passive mode-locked Nd∶YLF laser[J]. IEEE Journal of Quantum Electronics, 28, 1710-1721(1992).

    [4] Keller U, Miller D A B, Boyd G D et al. Solid-state low-loss intracavity saturable absorber for Nd∶YLF lasers: an antiresonant semiconductor Fabry-Perot saturable absorber[J]. Optics Letters, 17, 505-507(1992).

    [5] Keller U, Knox W H, Hooft G W. Ultrafast solid-state mode-locked lasers using resonant nonlinearities[J]. IEEE Journal of Quantum Electronics, 28, 2123-2133(1992).

    [6] Brovelli L R, Keller U, Chiu T H. Design and operation of antiresonant Fabry-Perot saturable semiconductor absorbers for mode-locked solid-state lasers[J]. Journal of the Optical Society of America B, 12, 311-322(1995).

    [7] Keller U, Weingarten K J, Kartner F X et al. Semiconductor saturable absorber mirrors (SESAM’s) for femtosecond to nanosecond pulse generation in solid-state lasers[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2, 435-453(1996).

    [8] Saraceno C J, Schriber C, Mangold M et al. SESAMs for high-power oscillators: design guidelines and damage thresholds[J]. IEEE Journal of Selected Topics in Quantum Electronics, 18, 29-41(2012).

    [9] Herda R, Okhotnikov O G. Dispersion compensation-free fiber laser mode-locked and stabilized by a high-contrast saturable absorber mirror[J]. Proceedings of SPIE, 5460, 14-22(2004).

    [10] Suomalainen S, Guina M, Hakulinen T et al. 1 μm saturable absorber with recovery time reduced by lattice mismatch[J]. Applied Physics Letters, 89, 071112(2006).

    [11] Kim M J, Kim H S, Kim N S et al. Investigation of InGaAs quantum-well parameters of a semiconductor saturable absorber mirror used for mode locking of a Yb-doped fiber laser[J]. Journal of the Korean Physical Society, 63, 1919-1924(2013).

    [12] Wang Y, Lin N, Gao W L et al. Strain compensated robust semiconductor saturable absorber mirror for fiber lasers[J]. Chinese Optics Letters, 17, 071404(2019).

    [13] Su N, Li P X, Lin N et al. Passively mode-locked Yb-doped all-fiber oscillator using self-made strain-compensated semiconductor mirrors as saturable absorbers[J]. Laser Physics, 31, 025102(2021).

    [14] Ju G F, Chai L, Wang Q Y et al. Stable mode-locking in an Yb∶YAG laser with a fast SESAM[J]. Chinese Optics Letters, 1, 695-696(2003).

    [15] Xue Y H, Wang Q Y, Zhang Z G et al. Passive mode locking of an Yb∶YAB laser with a low modulation depth SESAM[J]. Chinese Optics Letters, 2, 466-467(2004).

    [16] Li J F, Liang X Y, He J P et al. Stable, efficient diode-pumped femtosecond Yb∶KGW laser through optimization of energy density on SESAM[J]. Chinese Optics Letters, 9, 071406(2011).

    [17] Keller U. Ultrafast all-solid-state laser technology[J]. Applied Physics B, 58, 347-363(1994).

    [18] Lederer M J, Kolev V, Luther-Davies B et al. Ion-implanted InGaAs single quantum well semiconductor saturable absorber mirrors for passive mode-locking[J]. Journal of Physics D, 34, 2455-2464(2001).

    [19] Okhotnikov O, Grudinin A, Pessa M. Ultra-fast fiber laser systems based on SESAM technology: new horizons and applications[J]. New Journal of Physics, 6, 177(2004).

    [20] van Stryland E W, Woodall M A, Vanherzeele H et al. Energy band-gap dependence of two-photon absorption[J]. Optics Letters, 10, 490-492(1985).

    [21] Tong Y Z, Zhang G Y, Chen W X. Structure and characteristic of AlGaAs-GaAs DBR grown by MOCVD[J]. Journal of Basic Science and Engineering, 2, 288-292(1994).

    Tools

    Get Citation

    Copy Citation Text

    Nan Lin, Li Zhong, Haiming Li, Xiaoyu Ma, Cong Xiong, Suping Liu, Zhigang Zhang. Strain-Compensated Multiquantum Well Structure Semiconductor Saturable Absorber Mirror[J]. Chinese Journal of Lasers, 2022, 49(11): 1101002

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category: laser devices and laser physics

    Received: Sep. 27, 2021

    Accepted: Nov. 12, 2021

    Published Online: Jun. 2, 2022

    The Author Email: Zhong Li (zhongli@semi.ac.cn)

    DOI:10.3788/CJL202249.1101002

    Topics