Strain-Compensated Multiquantum Well Structure Semiconductor Saturable Absorber Mirror

Nan Lin; Li Zhong; Haiming Li; Xiaoyu Ma; Cong Xiong; Suping Liu; Zhigang Zhang

doi:10.3788/CJL202249.1101002

Chinese Journal of Lasers, Volume. 49, Issue 11, 1101002(2022)

Strain-Compensated Multiquantum Well Structure Semiconductor Saturable Absorber Mirror

Nan Lin^1,2, Li Zhong^1,2、*, Haiming Li³, Xiaoyu Ma^1,2, Cong Xiong¹, Suping Liu¹, and Zhigang Zhang⁴

¹National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China

²College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China

³Guangdong Huakuai Photonics Technology Co., Ltd., Zhongshan 528436, Guangdong, China

⁴School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China

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Figures & Tables(10)

Fig. 1. Schematic of two strain-compensated multiquantum well SESAMs structures

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Fig. 2. PL spectra of samples A, B, C, E, and F

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$High resolution X-ray diffraction rocking curves on the lattice plane (004) of six samples. (a) Sample A; (b) sample B; (c) sample C; (d) sample D; (e) sample E; (f) sample F$

Fig. 3. High resolution X-ray diffraction rocking curves on the lattice plane (004) of six samples. (a) Sample A; (b) sample B; (c) sample C; (d) sample D; (e) sample E; (f) sample F

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Fig. 4. Reflection spectra of test and simulation for sample D

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Fig. 5. Reflection spectra of test and simulation for samples E and F. (a) Sample E; (b) sample F

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Fig. 6. Mode locking laser for testing the SESAM

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Fig. 7. Results of mode locking test. (a) Curve of output power at different pump powers; (b) output optical spectrum; (c) output pulse width measured by autocorrelator; (d) oscilloscope trace with a mode-locked pulse train

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Table 1. Specific growth parameters of DBR, MQW, and SESAM

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Table 1. Specific growth parameters of DBR, MQW, and SESAM

Sample	GaAs buffer thickness /nm	Number of DBR periods	Number of MQW periods	GaAsP layer
Sample	GaAs buffer thickness /nm	Number of DBR periods	Number of MQW periods	AsH₃flow /(mL·min^－1)	PH₃ flow /(mL·min^－1)
A	200	-	15	80	500
B	200	-	30	80	500
C	200	-	30	40	500
D	200	30	-	-	-
E	200	30	15	80	500
F	200	30	30	40	500

Table 2. PL spectrum peak wavelength and FWHM of samples A, B, C, E, and F
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Table 2. PL spectrum peak wavelength and FWHM of samples A, B, C, E, and F
Sample A B C E F
Peak wavelength /nm 1079.0 1080.0 1078.1 1083.7 1095.0
FWHM /nm 25.5 54.8 42.0 29.7 58.4

Table 3. Periodic thickness of MQW and DBR for samples AF
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Table 3. Periodic thickness of MQW and DBR for samples AF
Sample A B C D E F
Periodic thickness of MQW /nm 20.2 20.1 20.2 19.7 19.8
Periodic thickness of DBR /nm - - - 166.7 162.8 163.5

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Nan Lin, Li Zhong, Haiming Li, Xiaoyu Ma, Cong Xiong, Suping Liu, Zhigang Zhang. Strain-Compensated Multiquantum Well Structure Semiconductor Saturable Absorber Mirror[J]. Chinese Journal of Lasers, 2022, 49(11): 1101002

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