Chinese Journal of Lasers, Volume. 47, Issue 4, 401006(2020)

High-Power and High-Reliability 9XX-nm Laser Diode

Yuan Qinghe1,2、*, Jing Hongqi1, Zhong Li1, Liu Suping1, and Ma Xiaoyu1,2
Author Affiliations
  • 1National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China
  • 2College of Materials Science and Opto-Electronics, University of Chinese Academy of Sciences, Beijing 100049, China
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    [12] Zubov F I, Semenova E S, Kulkova I V et al. On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of ~1.5 μm on an InP substrate[J]. Semiconductors, 51, 1332-1336(2017).

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    [14] Liu X S, Zhao W, Xiong L L et al. Packaging of high power semiconductor lasers[M]. New York: Springer(2015).

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    Yuan Qinghe, Jing Hongqi, Zhong Li, Liu Suping, Ma Xiaoyu. High-Power and High-Reliability 9XX-nm Laser Diode[J]. Chinese Journal of Lasers, 2020, 47(4): 401006

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    Paper Information

    Category: laser devices and laser physics

    Received: Oct. 31, 2019

    Accepted: --

    Published Online: Apr. 8, 2020

    The Author Email: Qinghe Yuan (yuanqinghe@semi.ac.cn)

    DOI:10.3788/CJL202047.0401006

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