Chinese Journal of Lasers, Volume. 47, Issue 4, 401006(2020)
High-Power and High-Reliability 9XX-nm Laser Diode
Figures & Tables(6)
Fig. 3. Relationship between threshold current and temperature of semiconductor laser diode
Table 1. Parameters of laser diode epitaxial structure
View tableTable 1. Parameters of laser diode epitaxial structure
Layer order Name Material Thickness /μm Doped /cm-3 12 Ohmic contact P-GaAs 0.25 Be, 0.1×1019--2.0×1019 11 Upper confinement P-Al0.3Ga0.7As 1.3 Be, ~1.0×1018 10 Upper waveguide Al0.255Ga0.745As 0.3 Not doped 9 High gap layer GaAsP 0.02 Not doped 8 Barrier Al0.154-0.255Ga0.846-0.745As 0.04 Not doped 7 Active region AlGaInAs 0.008 Not doped 6 Barrier Al0.154-0.255Ga0.846-0.745As 0.04 Not doped 5 High gap layer GaAsP 0.02 Not doped 4 Lower waveguide Al0.255Ga0.745As 0.3 Not doped 3 Lower confinement N-Al0.3Ga0.7As 2.55 Si, ~1.0×1018 2 Transition layer N-Al0.15-0.3Ga0.85-0.7As 0.18 Si, ~1.0×1018 1 Buffer layer N-GaAs 0.35 Si, ~1.0×1018 0 Substrate N-GaAs 350 —
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Yuan Qinghe, Jing Hongqi, Zhong Li, Liu Suping, Ma Xiaoyu. High-Power and High-Reliability 9XX-nm Laser Diode[J]. Chinese Journal of Lasers, 2020, 47(4): 401006
Paper Information
Category: laser devices and laser physics
Received: Oct. 31, 2019
Accepted: --
Published Online: Apr. 8, 2020
The Author Email: Qinghe Yuan (yuanqinghe@semi.ac.cn)
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