High-stability 4H-SiC avalanche photodiodes for UV detection at high temperatures

Xingye Zhou; Yuanjie Lü; Hongyu Guo; Xubo Song; Yuangang Wang; Shixiong Liang; Aimin Bu; Zhihong Feng

doi:10.3788/COL202321.032502

Chinese Optics Letters, Volume. 21, Issue 3, 032502(2023)

High-stability 4H-SiC avalanche photodiodes for UV detection at high temperatures

Xingye Zhou, Yuanjie Lü^*, Hongyu Guo, Xubo Song, Yuangang Wang, Shixiong Liang, Aimin Bu, and Zhihong Feng^**

Author Affiliations

National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

show less

References(26)

[1] T. Liu, P. Wang, H. Zhang. Performance analysis of non-line-of-sight ultraviolet communication through turbulence channel. Chin. Opt. Lett., 13, S21501(2015).

[2] X. Guo, L. B. Rowland, G. T. Dunne, J. A. Fronheiser, P. M. Sandvik, A. L. Beck, J. C. Campbell. Demonstration of ultraviolet separate absorption and multiplication 4H-SiC avalanche photodiodes. IEEE Photon. Technol. Lett., 18, 1910(2006).

[3] H.-D. Liu, D. McIntosh, X. Bai, H. Pan, M. Liu, J. C. Campbell, H. Y. Cha. 4H-SiC PIN recessed-window avalanche photodiode with high quantum efficiency. IEEE Photon. Technol. Lett., 20, 1551(2008).

[4] H.-D. Liu, X. Zheng, Q. Zhou, X. Bai, D. C. McIntosh, J. C. Campbell. Double mesa sidewall silicon carbide avalanche photodiode. IEEE J. Quantum Electron., 45, 1524(2009).

[5] Q. Zhou, D. McIntosh, H.-D. Liu, J. C. Campbell. Proton-implantation-isolated separate absorption charge and multiplication 4H-SiC avalanche photodiodes. IEEE Photon. Technol. Lett., 23, 299(2011).

[6] A. Vert, S. Soloviev, J. Fronheiser, P. Sandvik. Solar-blind 4H-SiC single-photon avalanche diode operating in Geiger mode. IEEE Photon. Technol. Lett., 20, 1587(2008).

[7] X. Cai, D. Zhou, S. Yang, H. Lu, D. Chen, F. Ren, R. Zhang, Y. Zheng. 4H-SiC SACM avalanche photodiode with low breakdown voltage and high UV detection efficiency. IEEE Photon. J., 8, 6805107(2016).

[8] X. Zhou, T. Han, Y. Lv, J. Li, W. Lu, Y. Wang, X. Tan, S. Liang, Z. Feng, S. Cai. Large-area 4H-SiC ultraviolet avalanche photodiodes based on variable-temperature reflow technique. IEEE Electron Device Lett., 39, 1724(2018).

[9] X. Zhou, X. Tan, Y. Wang, X. Song, T. Han, J. Li, W. Lu, G. Gu, S. Liang, Y. Lv, Z. Feng. Large-area 4H-SiC avalanche photodiodes with high gain and low dark current for visible-blind ultraviolet detection. Chin. Opt. Lett., 17, 090401(2019).

[10] X. Bai, H.-D. Liu, D. C. McIntosh, J. C. Campbell. High-detectivity and high-single-photon-detection-efficiency 4H-SiC avalanche photodiodes. IEEE J. Quantum Electron., 45, 300(2009).

[11] J. Hu, X. Xin, X. Li, J. H. Zhao, B. L. VanMil, K.-K. Lew, R. L. Myers-Ward, C. R. Eddy, D. K. Gaskill. 4H-SiC visible-blind single-photon avalanche diode for ultraviolet detection at 280 and 350 nm. IEEE Trans. Electron Devices, 55, 1977(2008).

[12] X. Xin, F. Yan, X. Sun, P. Alexandrove, C. M. Stahle, J. Hu, M. Matsumura, X. Li, M. Weiner, H. J. Zhao. Demonstration of 4H-SiC UV single photon counting avalanche photodiode. Electron. Lett., 41, 212(2005).

[13] X. Zhou, X. Tan, Y. Lv, Y. Wang, J. Li, X. Song, S. Liang, Z. Feng, S. Cai. Single-photon-counting performance of 4H-SiC avalanche photodiodes with a wide-range incident flux. IEEE Photon. Technol. Lett., 32, 847(2020).

[14] A. Vert, S. Soloviev, A. Bolotnikov, P. Sandvik. Silicon carbide photomultipliers and avalanche photodiode arrays for ultraviolet and solar-blind light detection. IEEE Sensors Conference(2009).

[15] F. Yan, C. Qin, J. H. Zhao, M. Bush, G. Olsen, B. K. Ng, J. P. R. David, R. C. Tozer, M. Weiner. Demonstration of 4H-SiC avalanche photodiodes linear array. Solid-State Electron., 47, 241(2003).

[16] L. Li, D. Zhou, H. Lu, W. Liu, X. Mo, F. Ren, D. Chen, R. Wang, G. Li, R. Zhang, Y. Zheng. 4H-SiC avalanche photodiode linear array operating in Geiger mode. IEEE Photon. J., 9, 6804207(2017).

[17] X. Zhou, X. Tan, Y. Lv, Y. Wang, J. Li, T. Han, H. Guo, S. Liang, Z.-H. Zhang, Z. Feng, S. Cai. 8 × 8 4H-SiC ultraviolet avalanche photodiode arrays with high uniformity. IEEE Electron Device Lett., 40, 1589(2019).

[18] X. Zhou, X. Tan, Y. Lv, Y. Wang, J. Li, S. Liang, Z.-H. Zhang, Z. Feng, S. Cai. 128-pixel arrays of 4H-SiC UV APD with dual-frequency PECVD SiNx passivation. Opt. Express, 28, 29245(2020).

[19] H.-Y. Cha, S. Soloviev, S. Zelakiewicz, P. Waldrab, P. M. Sandvik. Temperature dependent characteristics of nonreach-through 4H-SiC separate absorption and multiplication APDs for UV detection. Sens. J., 8, 233(2008).

[20] D. Zhou, F. Liu, H. Lu, D. Chen, F. Ren, R. Zhang, Y. Zheng. High-temperature single photon detection performance of 4H-SiC avalanche photodiodes. IEEE Photon. Technol. Lett., 26, 1136(2014).

[21] S. Yang, D. Zhou, X. Cai, W. Xu, H. Lu, D. Chen, F. Ren, R. Zhang, Y. Zheng, R. Wang. Analysis of dark count mechanisms of 4H-SiC ultraviolet avalanche photodiodes working in Geiger mode. IEEE Trans. Electron Devices, 64, 4532(2017).

[22] R. Raghunathan, B. J. Baliga. Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC. Solid-State Electron., 43, 199(1999).

[23] A. Konstantinov, T. Neyer. Pattern of near-uniform avalanche breakdown in off-oriented 4H SiC. IEEE Trans. Electron Devices, 61, 4153(2014).

[24] K. Mochizuki, N. Kameshiro, H. Matsushima, H. Okino, R. Yamada. Uniform luminescence at breakdown in 4H-SiC 4°-off (0001) p–n diodes terminated with an asymmetrically spaced floating-field ring. IEEE J. Electron Devices Soc., 3, 349(2015).

[25] L. Su, X. Cai, H. Lu, D. Zhou, W. Xu, D. Chen, F. Ren, R. Zhang, Y. Zheng, G. Li. Spatial non-uniform hot carrier luminescence from 4H-SiC p-i-n avalanche photodiodes. IEEE Photon. Technol. Lett., 31, 447(2019).

[26] I. Watanabe, M. Tsuji, M. Hayashi, K. Makita, K. Taguchi. Reliability of mesa-structure InAlGaAs-InAlAs superlattice avalanche photodiodes. IEEE Photon. Technol. Lett., 8, 824(1996).

Cited By