Chinese Optics Letters, Volume. 21, Issue 3, 032502(2023)
High-stability 4H-SiC avalanche photodiodes for UV detection at high temperatures
Figures & Tables(6)
Fig. 1. Device structure of 4H-SiC APDs. (a) Schematic cross-sectional structure; (b) doping concentration profile of epilayers obtained by SIMS.
Fig. 2. Characteristics of 4H-SiC APDs at room temperature. (a) I-V and I-M curves; (b) spectral responsivity. Here, the photo image of the fabricated 4H-SiC APD is shown in the inset of Fig. 2(a).
Fig. 3. Performance of 4H-SiC APDs at different temperatures. (a) Dark currents near the breakdown voltage; (b) breakdown voltage shift as a function of temperature.
Fig. 4. Two-dimensional mapping of the junction temperature for 4H-SiC APDs with different maximum junction temperatures. (a) 145°C; (b) 270°C.
Fig. 5. Dark current of 4H-SiC APD as a function of aging time with different stress conditions. (a) 175°C/100 µA; (b) 200°C/100 µA; (c) 200°C/500 µA.
Table 1. Comparison of Different 4H-SiC APDs
View tableView in ArticleTable 1. Comparison of Different 4H-SiC APDs
Parameters Ref. [ 19 ]Ref. [ 20 ]This Work Vb (V) 634 186 163 Idark Vb ( ) Gain 2500 Maximum QE (%) 45%@290 nm 53%@290 nm 54%@285 nm CT of Vb (mV/°C) 110 14 7.4
Tools
Get Citation
Copy Citation Text
Xingye Zhou, Yuanjie Lü, Hongyu Guo, Xubo Song, Yuangang Wang, Shixiong Liang, Aimin Bu, Zhihong Feng, "High-stability 4H-SiC avalanche photodiodes for UV detection at high temperatures," Chin. Opt. Lett. 21, 032502 (2023)
Paper Information
Category: Optoelectronics
Received: Jun. 21, 2022
Accepted: Sep. 30, 2022
Published Online: Oct. 31, 2022
The Author Email: Yuanjie Lü (yuanjielv@163.com), Zhihong Feng (ga917vv@163.com)
© Copyright 2018-2021 | Chinese Laser Press.
All Rights Reserved 沪ICP备15018463号-20