Semiconductor Optoelectronics, Volume. 45, Issue 6, 879(2024)

Simulations on the Characteristics of 3 300 V Planar Gate IGBT Device

LI Wenpei1... WANG Yongshun1, ZHANG Lijun2, LI Mengmeng1 and HU Yao3 |Show fewer author(s)
Author Affiliations
  • 1School of Electronic and Information Engineering, Lanzhou Jiaotong University, Lanzhou 730070, CHN
  • 2School of Electronic Information and Electrical-Engineering, Tianshui Normal University, Tianshui 74100, CHN
  • 3School of Mechanical and Electrical-Engineering, Lanzhou Jiaotong University, Lanzhou 730070, CHN
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    References(15)

    [1] [1] Cheng Y, Wang Y, Feng S, et al. Impact ionization induced breakdown and related HTRB behaviors in 100-V p-GaN gate HEMTs [C]// 2021 33rd Inter. Symposium on Power Semiconductor Devices and ICs (ISPSD), 2021: 1-4.

    [2] [2] Deguchi T, Mizushima T, Fujisawa H, et al. Static and dynamic performance evaluation of >13 kV SiC p-channel IGBTs at high temperatures [C]// 2014 IEEE 26th International Symposium on Power Semiconductor Devices & ICs (ISPSD), 2014: 261-264.

    [3] [3] Chowdhury S, Hitchcock C, Stum Z, et al. 4H-SiC n-channel insulated gate bipolar transistors on (0001) and (000-1) oriented free-standing n-substrates [J]. IEEE Electron Device Letters, 2016, 37(3): 317-320.

    [4] [4] Tang G, Tang X, Song Q, et al. Frequency-improved 4H-SiC IGBT with multizone collector design [J]. IEEE Transactions on Electron Devices, 2019, 67(1): 198-203.

    [5] [5] Jin R, Wang Y, Li L, et al. Comparative study of electro-thermal characteristics of 4 500 V diffusion-CS IGBT and buried-CS IGBT [J]. IET Circuits, Devices & Systems, 2021, 15(3): 251-259.

    [6] [6] Huang J, Huang H, Chen X B. Simulation study of a low ON-state voltage superjunction IGBT with self-biased PMOS [J]. IEEE Transactions on Electron Devices, 2019, 66(7): 3242-3246.

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    [9] [9] Li P, Kong M, Chen X. A novel diode-clamped CSTBT with ultra-low on-state voltage and saturation current [C]// 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016: 307-310.

    [10] [10] Karner H W, Kernstock C, Stanojevi Z, et al. TCAD-based characterization of logic cells: Power, performance, area, and variability [C]// 2017 Inter. Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2017: 1-2.

    [11] [11] Liu Y, Jia D, Fang J. On-state voltage drop analytical model for 4H-SiC trench IGBTs [J]. Crystals, 2022, 12(5): 582.

    [13] [13] Chen W, Tao H, Lou L, et al. Low loss insulated gate bipolar transistor with electron injection (EI-IGBT) [J]. IEEE Journal of the Electron Devices Society, 2017, 5(4): 275-282.

    [14] [14] Wang Y, Pu K, Zeng J, et al. Process optimization for improving the threshold voltage distribution of 3 300 V IGBT platform [C]// 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2020: 1-4.

    [15] [15] Zhang X, Shen P, Zou Z, et al. A snapback-free and low turn-off loss 15 kV 4H-SiC IGBT with multifunctional P-floating layer [J]. Micromachines, 2022, 13(5): 734.

    [16] [16] Tian X L, Li C Z, Yang Y, et al. Design and characterization of 10 kV high voltage 4H-SiC p-channel IGBTs with low VF [J]. Materials Science Forum, 2022, 1062: 435-441.

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    LI Wenpei, WANG Yongshun, ZHANG Lijun, LI Mengmeng, HU Yao. Simulations on the Characteristics of 3 300 V Planar Gate IGBT Device[J]. Semiconductor Optoelectronics, 2024, 45(6): 879

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    Paper Information

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    Received: Jul. 16, 2024

    Accepted: Feb. 28, 2025

    Published Online: Feb. 28, 2025

    The Author Email:

    DOI:10.16818/j.issn1001-5868.2024071602

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