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Semiconductor Optoelectronics, Volume. 45, Issue 6, 879(2024)

Simulations on the Characteristics of 3 300 V Planar Gate IGBT Device

LI Wenpei1, WANG Yongshun1, ZHANG Lijun2, LI Mengmeng1, and HU Yao3
Author Affiliations
  • 1School of Electronic and Information Engineering, Lanzhou Jiaotong University, Lanzhou 730070, CHN
  • 2School of Electronic Information and Electrical-Engineering, Tianshui Normal University, Tianshui 74100, CHN
  • 3School of Mechanical and Electrical-Engineering, Lanzhou Jiaotong University, Lanzhou 730070, CHN
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    LI Wenpei, WANG Yongshun, ZHANG Lijun, LI Mengmeng, HU Yao. Simulations on the Characteristics of 3 300 V Planar Gate IGBT Device[J]. Semiconductor Optoelectronics, 2024, 45(6): 879

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    Paper Information

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    Received: Jul. 16, 2024

    Accepted: Feb. 28, 2025

    Published Online: Feb. 28, 2025

    The Author Email:

    DOI:10.16818/j.issn1001-5868.2024071602

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology