Semiconductor Optoelectronics, Volume. 45, Issue 6, 879(2024)

Simulations on the Characteristics of 3 300 V Planar Gate IGBT Device

LI Wenpei1... WANG Yongshun1, ZHANG Lijun2, LI Mengmeng1 and HU Yao3 |Show fewer author(s)
Author Affiliations
  • 1School of Electronic and Information Engineering, Lanzhou Jiaotong University, Lanzhou 730070, CHN
  • 2School of Electronic Information and Electrical-Engineering, Tianshui Normal University, Tianshui 74100, CHN
  • 3School of Mechanical and Electrical-Engineering, Lanzhou Jiaotong University, Lanzhou 730070, CHN
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    Insulated gate bipolar transistors (IGBT) are widely used in the electronic industry for their excellent advantages such as low on-state voltage, high current capability, fast switching speed, and high input impedance. The physical model of 3 300 V field cut-off IGBT (FS-IGBT) with planar gate structure was established based on the device structure and physical mechanism presented in this paper. The breakdown performance was simulated, and an in depth analysis was conducted on the transfer and conduction characteristics. Within a reasonable threshold voltage range, the drift region thickness and regional P-body, P+ substrate, and N-type buffer doping concentrations had significant effects on the breakdown voltage and on-voltage drop of the device. The results indicate that the saturation voltage and turn-off loss of the FS-IGBT device were reduced by 5.2% and 32%, respectively, compared with that of the conventional planar-gate IGBT structure, and the breakdown voltage improved by 14%, with a threshold voltage of 5.3 V.

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    LI Wenpei, WANG Yongshun, ZHANG Lijun, LI Mengmeng, HU Yao. Simulations on the Characteristics of 3 300 V Planar Gate IGBT Device[J]. Semiconductor Optoelectronics, 2024, 45(6): 879

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    Paper Information

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    Received: Jul. 16, 2024

    Accepted: Feb. 28, 2025

    Published Online: Feb. 28, 2025

    The Author Email:

    DOI:10.16818/j.issn1001-5868.2024071602

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