Semiconductor Optoelectronics, Volume. 45, Issue 6, 879(2024)
Simulations on the Characteristics of 3 300 V Planar Gate IGBT Device
Insulated gate bipolar transistors (IGBT) are widely used in the electronic industry for their excellent advantages such as low on-state voltage, high current capability, fast switching speed, and high input impedance. The physical model of 3 300 V field cut-off IGBT (FS-IGBT) with planar gate structure was established based on the device structure and physical mechanism presented in this paper. The breakdown performance was simulated, and an in depth analysis was conducted on the transfer and conduction characteristics. Within a reasonable threshold voltage range, the drift region thickness and regional P-body, P+ substrate, and N-type buffer doping concentrations had significant effects on the breakdown voltage and on-voltage drop of the device. The results indicate that the saturation voltage and turn-off loss of the FS-IGBT device were reduced by 5.2% and 32%, respectively, compared with that of the conventional planar-gate IGBT structure, and the breakdown voltage improved by 14%, with a threshold voltage of 5.3 V.
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LI Wenpei, WANG Yongshun, ZHANG Lijun, LI Mengmeng, HU Yao. Simulations on the Characteristics of 3 300 V Planar Gate IGBT Device[J]. Semiconductor Optoelectronics, 2024, 45(6): 879
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Received: Jul. 16, 2024
Accepted: Feb. 28, 2025
Published Online: Feb. 28, 2025
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