[1] [1] Kalnitshy A, Tay S P, Ellul J P, et al. J. Electrochem. Soc., 1990, 137(1): 234.

[2] [2] Kim S Y, Irene E A. Rev. Sci. Instrum., 1995, 66(11): 5277.

[3] [3] Seah M P, Spencer S J. Surf. Interface Anal., 2002, 33(8): 640.

[4] [4] Seah M P, Spencer S J. Surf. Interface Anal., 2003, 35(6): 515.

[5] [5] Seah M P, White R. Surf. Interface Anal., 2002, 33(12): 960.

[6] [6] Seah M P, Spencer S J. Surf. Interface Anal., 2005, 37(9): 731.

[7] [7] Seah M P. Surf. Interface Anal., 2005, 37(3): 300.

[8] [8] Cumpson P J, Seah M P. Surf. Interface Anal., 1997, 25(6): 430.

[9] [9] Seah M P, Gilmore I S. Surf. Interface Anal., 2001, 31(9): 835.

[10] [10] Seah M P, Spencer S J. J. Vac. Sci. Technol. A, 2003, 21(2): 345.

[11] [11] Seah M P. CCQM-K32 Key Comparison and P84 Pilot Study Amount of silicon oxide as a thickness of SiO2 on Si, NPL Report AS 27, Teddington, UK, 2008.

[12] [12] Shirley D A. Phys. Rev. B, 1972, 5(12): 4709.

[13] [13] Fadley C S. J. Electr. Spectr., 1974, 5(1): 725.

[14] [14] Fadley C S, Baird R J, Siekhaus W, et al. J. Electr. Spectr., 1974, 4(2): 93.